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Vishay Si9912 Data Sheet

Summary

The Si9912 is a robust dual MOSFET high-speed driver engineered for efficient DC-DC switchmode power supplies, including synchronous buck converters. Featuring bootstrapped high-side driving capabilities and integrated break-before-make protection, it excels in mobile computing and high-frequency applications. This manual provides engineers with comprehensive specifications, absolute maximum ratings, detailed timing diagrams (rise/fall times), and multiple application circuits necessary for accurately implementing reliable, compact power solutions.

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查询SI9912供应商

Si9912 Vishay Siliconix

Half-Bridge MOSFET Driver for Switching Power Supplies

FEATURES APPLICATIONS

4.5- to 5.5-V Operation Multiphase Desktop CPU Supplies Undervoltage Lockout Single-Supply Synchronous Buck Converters 250-k Hz to 1-MHz Switching Frequency Mobile Computing CPU Core Power Converters Shutdown Quiescent Current <5 A Standard-Synchronous Converters One Input PWM Signal Generates Both Drive High Frequency Switching Converters

Bootstrapped High-Side Drive Operates from 4.5- to 30-V Supply TTL/CMOS Compatible Input Levels 1-A Peak Drive Current Break-Before-Make Circuit

DESCRIPTION The Si9912 is a dual MOSFET high-speed driver with driver. When disabled, the quiescent current of the driver is break-before-make. It is designed to operate in high frequency less than 5 A. dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated

The Si9912 is available in both standard and lead (Pb)-free, 8-pin

with “floating” high-side gate drivers. Each driver is capable of

SOIC packages for operation over the industrial operation range

switching a 3000-p F load with 60-ns propogation delay and

(−40C to 85C).

25-ns transition time. The Si9912 comes with an internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A shutdown pin is used to enable the

FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE

CBOOT TRUTH TABLE

Level Shift

VS SD IN VOUTL VOUTH

OUTPUT

Undervoltage

IN Q2

Document Number: 71311 www.vishay.com S-40134—Rev. B, 16-Feb-04

Page Summary Contents For Vishay Si9912 Data Sheet

Page 1 查询SI9912供应商 Si9912 Vishay Siliconix Half-Bridge MOSFET Driver for Switching Power Supplies FEATURES APPLICATIONS 4.5- to 5.5-V Operation Multiphase Desktop CPU Supplies Undervoltage Lockout Single-Sup...
Page 2 Si9912 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Low Side Driver Supply Voltage VDD 7.0 Input Voltage on IN VIN −0.3 to VDD +0.3 Shutdown...
Page 3 Si9912 Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified Limits VDD = 4.5 to 5.5 V Parameter Symbol VBOOT = 4.5 to 30 V, TA = −40 to 85C Mina Typb Maxa Unit Bootstrap Diode Diode Forwa...
Page 4 Si9912 Vishay Siliconix PIN CONFIGURATION 1OUTH VS GND BOOT IN VDD SD OUTL Top View PIN DESCRIPTION Pin Number Name Function OUTH Output drive for upper MOSFET. GND Ground supply IN CMOS level input s...
Page 5 Si9912 ut pu t V ol ta ge ro (V ut pu t V ol ta ge ro (V ur re nt Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) IDD Supply Current vs. Frequency Rise and Fall Time vs. CLOAD See Figure ...
Page 6 Si9912 Vishay Siliconix ut pu t V ol ta ge ro (V ut pu t V ol ta ge ro (V TYPICAL CHARACTERISTICS (25C UNLESS NOTED) VOUT(H+) vs. Temperature VOUT(H−) vs. Temperature See Figure 3 See Figure 3 Temper...
Page 7 Si9912 Vishay Siliconix Bootstrap Supply Operation Layout Considerations (see Functional Block Diagram) There are a few critical layout considerations for these parts. The power to drive the high-side...
Page 8 Si9912 Vishay Siliconix CLOAD OUTH VS OUTH VS ISRC GND BOOT GND BOOT PWM IN IN VDD IN VDD Input SD OUTL SD OUTL CLOAD ISRC Si9912 C8 Si9912 GND GND FIGURE 2. Capacitive Load Test Circuit Used to Measu...