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Siemens BB 835 Silicon Tuning Diode Data Sheet

Summary

A comprehensive datasheet providing detailed specifications and electrical characteristics for the BB 835 Silicon Tuning Diode. This specialized component features an extended operational frequency range up to 2.8 GHz and is optimized for use in TV-SAT indoor units. The manual details essential technical data, including maximum ratings, capacitance ratios, current limits, and precise electrical parameters, making it a critical resource for RF circuit designers and electronics engineers developing advanced satellite reception or tuning equipment.

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Silicon Tuning Diode BB 835

Preliminary data

Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio

Type Marking Ordering Code Pin Configuration Package

(tape and reel)

BB 835 yellow X Q62702-B802 SOD-323

Maximum Ratings

Parameter Symbol Values Unit

Reverse voltage VR Reverse voltage (R kΩ) VRM Forward current IF m A

Operating temperature range – 55… +150 °C

Storage temperature range Tstg – 55… +150 °C

Thermal Resistance

Junction - ambient Rth JA K/W

1) For detailed informatioon see chapter Package Outline

Semiconductor Group 04.96

Page Summary Contents For Siemens BB 835 Silicon Tuning Diode Data Sheet

Page 1 Silicon Tuning Diode BB 835 Preliminary data Features Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio Type Marking Ordering Code Pin Confi...
Page 2 BB 835 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Reverse current IR n A VR = 30 VR = 30 V, TA = 85 °C Diode ca...