SIEMENS BAS 19 Data Sheet
Summary
Discover reliable performance with these advanced High-Speed Silicon Switching Diodes (SSDs), ideal for high-voltage power management circuits. This comprehensive datasheet details the technical specifications, including maximum operational ratings, electrical characteristics, and recovery times for the entire BAS 19, BAS 20, and BAS 21 series. It is an essential resource for electronics engineers and designers who require dependable semiconductor switches for demanding, high-speed applications.
Page 1 Text Content
Silicon Switching Diodes BAS 19
… BAS 21
High-speed, high-voltage switch
Type Marking Ordering Code Package1)Pin Configuration
(tape and reel)
BAS 19 JPs Q62702-A95 SOT-23 BAS 20 JRs Q62702-A113 BAS 21 JSs Q62702-A79
Maximum Ratings Parameter Symbol Values Unit
BAS BAS BAS
Reverse voltage VR Peak reverse voltage VRM Forward current IF m A Peak forward current IFM Total power dissipation, TS = 70 ˚C Ptot m W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient2) Rth JA ≤ 300 K/W
Junction - soldering point Rth JS ≤ 230
1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm mm mm/6 cm2 Cu.
Semiconductor Group 07.94
Page Summary Contents For SIEMENS BAS 19 Data Sheet
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 5 |
| File Size | 109.81 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
BAS 19, BAS 20, 和 BAS 21 型号的最大反向电压是多少？
它们的最大反向电压分别是 100 V、150 V 和 200 V。
这款二极管在 70°C 环境下，总功耗限制是多少？
在 Tj = 70°C 时，最大总功率耗散为 350 mW。
BAS 19 型号的反向恢复时间（trr）是多少？
反向恢复时间 trr 在特定条件下测量为 0.6 ns。
用于测试反向恢复时间的标准条件是什么？
测试电路需要使用脉冲发生器（tp = 100 ns, D = 0.05）和示波器 (R = 50 Ω)。