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Siemens BFP 81 User Guide

Summary

Explore the BFP 81 NPN Silicon RF Transistor, an ideal component for designing low-noise amplifiers up to 2GHz across collector current ranges from 0.5 mA to 20 mA. This comprehensive manual provides essential engineering data, including detailed maximum ratings, full electrical characteristics (DC and AC), SPICE model parameters, and power gain calculations. It is designed for RF circuit designers and semiconductor engineers who require reliable specifications for high-frequency amplifier development.

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Page 1 Text Content

BFP 81

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz at collector currents from 0.5 m A to 20 m A.

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 FAs Q62702-F1611 1 = C 2 = E 3 = B 4 = E SOT-143

Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-emitter voltage VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current IC m A Base current IB Total power dissipation Ptot m W TS ≤ 73 °C Junction temperature Tj °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) Rth JS ≤ 275 K/W

1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group Dec-11-1996

Page Summary Contents For Siemens BFP 81 User Guide

Page 1 BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 m A to 20 m A. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Ma...
Page 2 BFP 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 m A, IB =...
Page 3 BFP 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T GHz IC = 15 m A, VCE = 8 V, f = 500 ...
Page 4 BFP 81 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 f A BF = NF = 0.80846 VAF = IKF = 0.22241 ISE = 5.8728 f A NE = 1.0668 BR = 25.974 NR = 0.3632...
Page 5 BFP 81 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy m W Ptot °C TA,TS Permissible Pulse Load Rth JS = f (tp) Permissible Pulse Load Ptotmax/Ptot DC = f (tp) Rth JS Ptotmax/Pto...
Page 6 BFP 81 Collector-base capacitance Ccb = f (VCB) Transition frequency f T = f (IC) VBE = vbe = 0, f = 1MHz VCE = Parameter GHz 5V Ccb f T 2V 0.7 VR IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = ...
Page 7 BFP 81 Power Gain Gma, Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz IC=15m A 0.9GHz 0...

Manual Details

Brand Siemens
Pages 7
File Size 79.08 KB
Published June 05, 2026
26 views

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Frequently Asked Questions

What is the maximum operating temperature for this transistor?

The junction temperature (Tj) range is -55°C to 150°C, and ambient temperature allows up to +150°C.

Does the BFP 81 support high-frequency applications?

Yes, it exhibits a transition frequency (ft) of 4.5 GHz at 3V and can operate up to 6 GHz.

What precautions should be taken when handling this device?

It is an ESD sensitive device, so observe careful handling procedures.

Where are the primary electrical specifications found?

The data provides maximum ratings, DC characteristics (like hfe), AC characteristics (capacitance), and frequency-dependent power gain curves.