SIEMENS BFP 420 Owner's Manual
Summary
The SIEGET 25 BFP 420 is a high-performance NPN silicon RF Transistor, engineered for demanding high-frequency applications, including low noise amplifiers and oscillators up to 10 GHz. Featuring an outstanding gain of 20 dB at 1.8 GHz and a 25 GHz transition frequency, this component ensures maximum reliability. This comprehensive datasheet provides seasoned electrical engineers and RF designers with all necessary details—including detailed S-parameters, noise figure analysis, and SPICE model parameters—required for reliable circuit integration and precise high-frequency product design.
Page 1 Text Content
SIEGET25 BFP 420
NPN Silicon RF Transistor
• For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 d B at 1.8 GHz outstanding Gms = 20 d B at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metalization for high reliability
VPS05605
• SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 420 AMs Q62702-F1591 1 = B 2 = E 3 = C 4 = E SOT-343
Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO V4.5
VCBO 15Collector-base voltage VEBOEmitter-base voltage 1.5
Collector current m AIC
IB 3Base current
Ptot m W160Total power dissipation, TS ≤ 107 °C
Junction temperature Tj °C
TA -65 ...+150Ambient temperature
Storage temperature Tstg -65 ...+150 Thermal Resistance
Junction - soldering point 1) Rth JS ≤ 270 K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group Jul-14-19981 Semiconductor Group 1998-11-01
Page Summary Contents For SIEMENS BFP 420 Owner's Manual
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 8 |
| File Size | 73.09 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What type of applications is this transistor suited for?
It is designed for high gain low noise amplifiers and oscillators up to 10 GHz.
Is handling this component sensitive to static electricity?
Yes, it is an Electrostatic discharge sensitive device, requiring observation of handling precautions.
What is the maximum allowable total power dissipation?
The total power dissipation ($P_{S ext{tot}}$) limit for this transistor is 160 mW.
What is the Noise Figure at 1.8 GHz?
The noise figure (F) is specified as 1.05 dB at 1.8 GHz.