Siemens BFP 450 User's Manual
Summary
The SIEGET 25 BFP 450 is a high-reliability NPN Silicon RF Transistor designed for robust performance in medium power amplifier applications. This comprehensive manual provides detailed technical specifications, including maximum ratings, full set of S-parameters, and noise figure measurements across various frequencies. It covers critical operating parameters (such as gain, compression point, and transition frequency) essential for electrical engineers and microwave circuit designers developing advanced RF systems.
Page 1 Text Content
SIEGET25 BFP 450
NPN Silicon RF Transistor
• For medium power amplifiers • Compression point P-1d B = +19 d Bm at 1.8 GHz maximum available gain Gma = 14 d B at 1.8 GHz Noise figure F = 1.25 d B at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability
VPS05605
• SIEGET 25 - Line Siemens Grounded Emitter Transistor 25 GHz f T - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 450 ANs Q62702-F1590 1 = B 2 = E 3 = C 4 = E SOT-343
Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO V4.5
VCBO 15Collector-base voltage VEBOEmitter-base voltage 1.5
Collector current m AIC
IB 10Base current
Ptot m W450Total power dissipation, TS ≤ 96 °C
Junction temperature Tj °C
TA -65 ...+150Ambient temperature
Storage temperature Tstg -65 ...+150 Thermal Resistance Junction - soldering point 1) Rth JS ≤ 130 K/W
1) TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group Sep-09-19981 Semiconductor Group 1998-11-01
Page Summary Contents For Siemens BFP 450 User's Manual
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 8 |
| File Size | 72.80 KB |
| Published | June 04, 2026 |
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