Siemens BUZ 101 SL User's Manual
Summary
This datasheet provides comprehensive technical specifications for the BUZ 101 SL power transistor, an N-channel MOSFET designed for efficient switching applications. Ideal for electronics designers working on demanding power management circuits requiring high reliability and stable operation up to 175°C. The manual details maximum ratings, static/dynamic electrical characteristics, transfer curves, and thermal performance data necessary for precise component integration into your circuit design.
Page 1 Text Content
查询BUZ101SL供应商
BUZ 101 SL SPP20N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
Type VDS ID RDS(on) Package Ordering Code
BUZ 101 SL 55 V 20 A 0.07 Ω TO-220 AB Q67040-S4012-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls TC = 25 °C Avalanche energy, single pulse EAS m J ID = 20 A, VDD = 25 V, RGS = 25 Ω L = 450 µH, Tj = 25 °C Avalanche current,limited by Tjmax IAR Avalanche energy,periodic limited by Tjmax EAR 5.5 m J Reverse diode dv/dt dv/dt k V/µs IS = 20 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C Gate source voltage VGS ± 14 Power dissipation Ptot TC = 25 °C
Semiconductor Group 29/Jan/1998
Page Summary Contents For Siemens BUZ 101 SL User's Manual
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 8 |
| File Size | 96.35 KB |
| Published | June 02, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the maximum continuous drain current (I_D)?
At T = 25°C, the maximum continuous drain current is 20 A.
What is the recommended operating temperature range?
The semiconductor group can operate between -55°C and +175°C.
How much power does the device dissipate on-resistance (R_DS(on)) at optimal conditions?
At V = 4.5 V and I = 14 A, R_DS(on) is typically 0.07 Ohms when using GS D.
What are the key electrical capacitances of this transistor?
The device has an Input capacitance (Ciss) of up to 200 pF, an Output capacitance (Coss) of 140 pF, and a Reverse transfer capacitance (Crss) of 100 pF.