Siemens BUZ 90 A SIPMOS Power Transistor Specifications
Summary
This datasheet provides comprehensive technical specifications for the BUZ 90A N-channel enhancement mode Power MOSFET, designed for reliable switching and high-power electronic applications. The manual covers critical electrical characteristics, including maximum ratings, dynamic performance curves ($R_{DS(on)}$, $C_{oss}$, time constants), and safe operating area calculations. It is essential reading for power electronics engineers and circuit designers who require detailed data to properly integrate and validate the component in demanding high-current circuits.
Page 1 Text Content
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BUZ 90 A
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 Pin 2 Pin 3
Type VDS ID RDS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 Ω TO-220 AB C67078-S1321-A3
Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID TC = 30 °C Pulsed drain current IDpuls TC = 25 °C Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR m J Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25 Ω L = 29 m H, Tj = 25 °C
Gate source voltage VGS ± 20
Power dissipation Ptot TC = 25 °C Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case Rth JC ≤ 1.67 K/W Thermal resistance, chip to ambient Rth JA DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 07/96
Page Summary Contents For Siemens BUZ 90 A SIPMOS Power Transistor Specifications
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 9 |
| File Size | 168.75 KB |
| Published | June 01, 2026 |
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