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SIEMENS PNP Silicon AF Transistors BCX 51 ... BCX 53 Owner's Manual

Summary

Explore high-performance PNP Silicon AF Transistors for robust signal and power handling applications. These components are ideal for AC/DC driver circuits and demanding output stages, featuring reliable performance parameters like stable collector current delivery and low saturation voltage. This technical manual provides comprehensive details covering maximum electrical ratings, detailed DC and AC operating characteristics (including hFE and fT), and specific guidelines necessary for professional electronics designers, circuit engineers, and product developers integrating advanced switching components into their designs.

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查询BCX51BCX53供应商

PNP Silicon AF Transistors BCX 51 ... BCX 53

Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 54 BCX 56 (NPN)

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

BCX 51 AA Q62702-C1847 SOT-89 BCX 51-10 AC Q62702-C1831 BCX 51-16 AD Q62702-C1857 BCX 52 AE Q62702-C1743 BCX 52-10 AG Q62702-C1744 BCX 52-16 AM Q62702-C1900 BCX 53 AH Q62702-C905 BCX 53-10 AK Q62702-C1753 BCX 53-16 AL Q62702-C1502

1) For detailed information see chapter Package Outlines.

Semiconductor Group 04.96

Page Summary Contents For SIEMENS PNP Silicon AF Transistors BCX 51 ... BCX 53 Owner's Manual

Page 1 查询BCX51BCX53供应商 PNP Silicon AF Transistors BCX 51 ... BCX 53 Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 54 BCX 56...
Page 2 BCX 51 ... BCX 53 Maximum Ratings Parameter Symbol Values Unit BCX 51 BCX 52 BCX 53 Collector-emitter voltage VCE0 Collector-base voltage VCB0 Emitter-base voltage VEB0 Collector current IC Peak colle...
Page 3 BCX 51 ... BCX 53 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Unit Values Parameter min. typ. max. DC characteristics V(BR)CE0 VCollector-emitter breakdown voltage IC ...
Page 4 BCX 51 ... BCX 53 Total power dissipation Ptot (TA*; TS) Collector current IC = f (VBE) Package mounted on epoxy VCE = 2 Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency f T (IC) ...
Page 5 BCX 51 ... BCX 53 DC current gain h FE (IC) Collector-emitter saturation voltage VCE = 2 IC (VCEsat) h FE = 10 Collector cutoff current ICB0 = f (TA) Base-emitter saturation voltage VCB = 30 IC (VBEsa...

Manual Details

Brand Siemens
Pages 5
File Size 147.39 KB
Published June 05, 2026
20 views

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Frequently Asked Questions

Which BCX model has the highest collector-emitter voltage rating (VCE)?

The BCX 53 transistor offers the highest $V_{CEO}$ at 80 V, which is significantly higher than the BCX 51 (45 V) and BCX 52 (60 V).

What are the recommended limits for junction temperature and power dissipation?

The junction temperature ($T_j$) must not exceed 150°C. Total power dissipation ($P_{tot}$) varies but is connected to thermal resistance guidelines.

What is the typical DC current gain (hFE) range for these transistors?

The nominal operating $h_{FE}$ ranges between 100 and 250, depending on specific package variants like -10 or -16.