Siemens BBY 51-03W Data Sheet
Summary
Explore detailed specifications for the BBY 51-03W Silicon Tuning Diode, an essential component designed for low tuning voltage operations in VCO circuits for mobile communications equipment. This comprehensive manual provides critical electrical data, including maximum ratings, RF characteristics, temperature coefficients, and operating limits. It is essential reading for electrical engineers and RF designers who require precise component selection and detailed performance metrics for integrating advanced tuning diodes into their communication systems.
Page 1 Text Content
BBY 51-03W
Silicon Tuning Diode
High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment
Type Marking Ordering Code Pin Configuration Package 1)
(tape and reel) 1 2
BBY 51-03W Q62702-B663 C1 A2 SOD-323
Maximum Ratings Parameter Symbol BBY 51-03W Unit Reverse voltage VR Forward current IF m A Operating temperature range -55 +150°C °C Storage temperature range Tstg -55...+150°C °C
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group Edition A01, 03.05.95
Page Summary Contents For Siemens BBY 51-03W Data Sheet
Manual Details
| Brand | Siemens |
|---|---|
| Pages | 3 |
| File Size | 28.36 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What is the maximum operating temperature range for this diode?
The device can operate at temperatures ranging from -55°C to +150°C.
What type of equipment is the BBY 51-03W intended for use with?
It is designed for use with VCO's in mobile communications equipment, supporting low tuning voltage operation.
How do I determine the diode capacitance ratio at specific voltages?
At T = 25 °C and f = 1 MHz, the typical Capacitance ratio ranges from 1.75 to 2.2 when measured between 1V and 4V.
What is the maximum reverse voltage rating ($V_R$) for this chip?
The maximum rated reverse voltage $V_R$ is 7V.