Siemens CGY31 User Guide

Summary

This high-performance GaAs MMIC amplifier is a two-stage monolithic microwave integrated circuit designed for reliable RF signal amplification across a wide frequency spectrum. The comprehensive manual provides RF engineers and designers with essential technical documentation, including maximum ratings, detailed electrical characteristics, S parameters, application circuits, and crucial guidelines for optimal operation. Use this resource to ensure proper handling (ESD precautions) and integration of the amplifier into your high-frequency microwave systems while achieving guaranteed performance metrics like gain flatness and low noise figure.

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查询CGY31供应商

Ga As MMIC CGY 31

Two-stage monolithic microwave IC (MMIC amplifier) All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 input/output; RLIN RLOUT > 10 d B Gain: 18 d B at 1.6 GHz Low noise figure: 4 d B at 1.6 GHz d B bandwidth: 2 GHz Hermetically sealed package

ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code Package1)Circuit Diagram (Pin Configuration) CGY 31 Q68000-A6887 TO-12

RF output, VS Interstage, VS RF input RF and DC ground, case

1) For detailed information see chapter Package Outlines.

Semiconductor Group

Page Summary Contents For Siemens CGY31 User Guide

Page 1 查询CGY31供应商 Ga As MMIC CGY 31 Two-stage monolithic microwave IC (MMIC amplifier) All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 input/output; RLIN RLOUT > 10 d B Gain: ...

Page 2 CGY 31 Maximum Ratings Parameter Symbol Values Unit Supply voltage, TC ˚C VS Total power dissipation, TC ˚C Ptot Channel temperature Tch ˚C Storage temperature range Tstg – 55 … + 150 Thermal Resistan...

Page 3 CGY 31 Electrical Characteristics at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 , unless otherwise specified, (for application circuit see next page). Symbol Unit Values Parameter min. typ. max. Iop m AOper...

Page 4 CGY 31 Application Circuit f= 800 MHz to 1800 MHz Legend of components C1, C2, C3 : 100 p F Chip capacitors R1 Resistor, e.g. l = 4 mm; ∅1.8 mm with axial leads L1 n H Inductance, e.g. 8 turns, 0.25 m...

Page 5 CGY 31 Total power dissipation Ptot = f (TC) Max. supply voltage VSmax = f (TC) Operating current Iop = f (VS) Semiconductor Group

Page 6 CGY 31 Power gain G = f (f) Power gain G = f (VS) VS = 4.5 V, RS = RL = 50 RS = RL = 50 Power output G = f (Pout) VS = 4.5 V, RS = RL = 50 f= 0.8 GHz Semiconductor Group

Page 7 CGY 31 Third order intercept point IP3 = f (VS) f= 0.8 GHz, RS = RL = 50 The intermodulation ratio d IM can easily be determined. d IM = 2 (IP3 – P0) IP3 Intercept point d IM Intermodulation ratio P0 ...

Page 8 CGY 31 S Parameters GHz MAG ANG MAG ANG MAG ANG MAG ANG VS = 4.5 V, Z0 = 50 0.1 0.42 – 35 7.77 0.007 0.25 – 19 0.3 0.28 – 42 8.93 – 12 0.008 0.21 – 20 0.5 0.26 – 51 9.04 – 34 0.008 0.21 – 23 0.7 0.25 ...

Page 9 CGY 31 S Parameters (continued) S21 = f (f) S22 = f (f) VS = 4.5 V, Z0 = 50 VS = 4.5 V, Z0 = 50 Semiconductor Group

Manual Details

Brand	Siemens
Pages	9
File Size	132.84 KB
Published	May 29, 2026

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Frequently Asked Questions

What is the required handling for this MMIC device?

It is ESD sensitive; observe handling precautions to protect against degradation due to excess voltage or excess current spikes.

What ground connection setup ensures stable operation?

An excellent ground connection of lead 4 and package (e.g., soldered on microstripline laminate) is required, providing adequate heat sink.

Are DC isolation methods necessary for connections?

Yes, input and output connections must be DC isolated by coupling capacitors.

What are the device's performance characteristics at 1.6 GHz (typical)?

It offers a gain of 18 dB, a low noise figure of 4 dB, and a 3 dB bandwidth of 2 GHz.