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SIEMENS BAT 15-098 Product Data Sheet

Summary

This comprehensive technical manual details the robust performance characteristics of the BAT 15-098 Silicon Schottky Diode. Designed for demanding RF applications, such as high-frequency mixers up to 10 GHz, this component provides reliable performance in various demanding circuits. The documentation covers essential maximum ratings, detailed electrical measurements (including forward voltage, breakdown limits), and complex impedance parameters across multiple frequency ranges. It is an indispensable resource for electronics engineers, material scientists, and RF designers needing precise specifications for advanced semiconductor circuit development.

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查询BAT15-098供应商

Silicon Schottky Diode BAT 15-098

Preliminary Data

DBS mixer application to 10 GHz Low noise figure Low barrier type

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Package1)Pin Configuration

(tape and reel)

Q62702-A0062white B SOD-123BAT 15-098

Maximum Ratings

Parameter Symbol Values Unit Reverse voltage VR Forward current IF m A

Power dissipation, TS ˚C Ptot m W

Storage temperature range Tstg – 55 … + 150 ˚C

Operating temperature range – 55 … + 150

Thermal Resistance

Junction - ambient2) Rth JA ≤ 770 K/W

Junction - soldering point Rth JS ≤ 690

1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

Semiconductor Group 07.94

Page Summary Contents For SIEMENS BAT 15-098 Product Data Sheet

Page 1 查询BAT15-098供应商 Silicon Schottky Diode BAT 15-098 Preliminary Data DBS mixer application to 10 GHz Low noise figure Low barrier type ESD: Electrostatic discharge sensitive device, observe handling prec...
Page 2 BAT 15-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Unit Values min. typ. max. Breakdown voltage V(BR) V4 IR = 5 µA Forward voltage VF IF = 1 m ...
Page 3 BAT 15-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group
Page 4 BAT 15-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) = 0.02 m A = 0.05 m A = 0.1 m A = 0.2 m A = 0.5 m A GHz MAG ANG MAG ANG MAG ANG MAG ANG MAG ANG Semiconduc...

Manual Details

Brand Siemens
Pages 4
File Size 90.79 KB
Published June 01, 2026
26 views

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Frequently Asked Questions

What are the operating temperature limits for this diode?

The operating temperature range is from -55 °C to +150 °C.

How much power does it dissipate at room temperature?

It has a maximum total power dissipation (Ptot) of 100 mW.

What is the recommended handling precaution for this ESD-sensitive device?

Users must observe electrostatic discharge sensitive handling precautions.

What type of package is used for mounting this diode assembly?

It can be packaged on alumina measuring 15 mm x 16.7 mm x 0.7 mm.