ROHM US5U1 datasheet user manual
Summary
This US5U1 component seamlessly integrates an N-channel MOSFET and a low VF Schottky barrier diode into one compact package, ideal for demanding switching power applications. Featuring high-speed performance and low on-resistance with reliable 2.5V drive compatibility, it offers enhanced efficiency and built-in ESD protection. This manual provides comprehensive technical data, including full absolute maximum ratings, electrical characteristics curves (such as switching times and on-state resistance), and detailed operational guidelines for design engineers and electrical professionals developing high-performance electronic circuits.
Page 1 Text Content
US5U1
Transistors
2.5V Drive Nch+SBD MOSFET US5U1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET /
TUMT5
Schottky barrier diode
Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U01
Applications Switching
Package specifications Inner circuit
Package Taping
Type Code TR
Basic ordering unit (pieces)
0. 2M ax
US5U1
∗1 (1)Gate
(2)Source (1) (2) (3) (3)Anode ∗1 ESD protection diode (4)Cathode ∗2 Body diode (5)Drain
Absolute maximum ratings (Ta=25°C) <MOSFET>
Parameter Symbol Limits Unit
Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.5 AID
Drain current
Pulsed ±6.0 AIDP Source current Continuous 0.75 AIS
(Body diode) Pulsed ∗1 6.0 AISP Power dissipation ∗2PD W / ELEMENT0.7
Channel temperature °CTch
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Parameter Symbol Limits Unit
Repetitive peak reverse voltage VVRM Reverse voltage VVR
Forward current 0.5 AIF
Forward current surge peak ∗1 2.0 AIFSM Power dissipation ∗2 0.5 W / ELEMENTPD
Junction temperature Tj °C ∗1 60Hz 1cycle ∗2 Mounted on ceramic board
Rev.B 1/3
Page Summary Contents For ROHM US5U1 datasheet user manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 4 |
| File Size | 65.48 KB |
| Published | June 01, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What is the required gate voltage drive capability?
The MOSFET requires a low voltage drive, specifically 2.5V, and operates with a maximum Gate-source voltage (VGS) of 12 V.
Where must the transistor be mounted for proper power dissipation?
All power ratings specify that the device must be mounted on a ceramic board.
Can US5U1 be used in life-critical systems like medical equipment?
No. For life-sustaining applications, consult your sales representative; this product is designed for ordinary electronic equipment only.
What are the maximum current limits for the body diode (Source current)?
The Body diode has a continuous Source current (IS) limit of 0.75 A and a pulsed limit of 6.0 A.