ROHM 2SAR542D datasheet user manual
Summary
Introducing the 2SAR542D, a high-performance midium power PNP Silicon transistor optimized for efficient switching and low saturation voltage applications. This comprehensive datasheet provides electrical engineers with crucial technical details, including absolute maximum ratings, detailed performance graphs (V-I curves), speed parameters, and package specifications. Ideal for designers building reliable industrial or driver circuits requiring predictable and robust component functionality.
Page 1 Text Content
Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor
(SC-63)
<SOT-428> 2.3 0.5
Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100m A) 2) High speed switching
(1) Base 0.65
Applications (2) Collector (1) (3) 2.3(2)
0.5 (3) Emitter 1.0
Driver
Packaging specifications Inner circuit (Unit : mm)
Package CPT3 (3)
Type Code TL Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit (1) Base
(2) Collector
Collector-base voltage VCBO -30
(3) Emitter (2)
Collector-emitter voltage VCEO -30 Emitter-base voltage VEBO -6
DC IC -5 0.
Collector current
Pulsed ICP *1 -10 5. 1. PD *2
Power dissipation
PD *3 0. 8M in
Junction temperature Tj °C
Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate *3 TC=25°C
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©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A
Page Summary Contents For ROHM 2SAR542D datasheet user manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 6 |
| File Size | 592.10 KB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What safety precautions must I take when using this transistor?
Always implement safety measures such as derating, redundancy, and fire control to guard against physical injury or fire.
What are the maximum operating voltages for high-power handling?
The absolute maximum rating limits include -30 V for both collector-base voltage ($V_{CBO}$) and collector-emitter voltage ($V_{CEO}$).
How efficient is this transistor at low saturation voltage?
It features a low saturation voltage, specified as $V_{CE(sat)}$ Max. of -0.4 V (for I = -2A / -100mA).
Does this transistor handle high-frequency switching?
Yes, it is described as having high speed switching and boasts a transition frequency of -240 MHz.