ROHM SP8M3 datasheet

Summary

Discover the SP8M3 family of switching transistors for reliable power management applications, including DC/DC converters and general power switching circuits. This technical document provides comprehensive datasheet details for N-channel and P-channel components. It covers critical parameters such as low on-resistance, built-in ESD protection diodes, operating voltage ranges, timing characteristics (turn-on/off delay), and package specifications (SOP8). Ideal for hardware engineers and designers requiring high-performance, surface-mount switching solutions.

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查询SP8M3供应商

SP8M3

Transistors

Switching SP8M3

Features External dimensions (Unit : mm)

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

Application Power switching, DC / DC converter.

Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Equivalent circuit ax .1 .7

Limits (8) (7) (6) (5) (8) (7) (6) (5)

Parameter Symbol Unit

Nchannel Pchannel

Drain-source voltage −30 VVDSS 0. 5± 0. Gate-source voltage −20 VVGSS Continuous ±5.0 ±4.5 AID

Drain current ∗2 ∗2

∗1 (1) (2) (3) (4) Pulsed ±20 ±18 AIDP Continuous Source current 1.6 −1.6 AIS (1) Tr1 (Nch) Source

(Body diode) ∗1 (2) Tr1 (Nch) Gate

Pulsed −18 AISP ∗1 ∗1

(3) Tr2 (Pch) Source

∗2 Total power dissipation WPD (4) Tr2 (Pch) Gate

(5) Tr2 (Pch) Drain

Channel temperature °CTch (1) (2) (3) (4)

(6) Tr2 (Pch) Drain

Storage temperature −55 to +150 °CTstg (7) Tr1 (Nch) Drain

∗1 ESD PROTECTION DIODE

∗1 Pw≤10µs, Duty cycle≤1% ∗2 BODY DIODE (8) Tr1 (Nch) Drain

∗2 MOUNTED ON A CERAMIC BOARD.

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

Thermal resistance (Ta=25°C)

Parameter Symbol Limits Unit

Channel to ambient 62.5 °C / WRth (ch-a) ∗MOUNTED ON A CERAMIC BOARD.

Rev.A 1/5

Page Summary Contents For ROHM SP8M3 datasheet

Page 1 查询SP8M3供应商 SP8M3 Transistors Switching SP8M3 Features External dimensions (Unit : mm) 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Pow...

Page 2 SP8M3 Transistors N-ch Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=1m A...

Page 3 SP8M3 Transistors P-ch Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS −10 µA VGS= −20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −...

Page 4 SP8M3 IC IN -S IN IT p F Transistors -S IS on ) ( N-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=0V VGS=10V ID=5A RG=10Ω RG=10Ω Pulsed Pulsed td (off) td (on)...

Page 5 SP8M3 IC IN -S IN −I IT p F Transistors -S IS on ) ( P-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD= −15V VDD= −15V VGS=0V VGS= −10V ID= −4.5A RG=10Ω RG=10Ω Pulsed Pulsed Cis...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Page 7 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.All Data Sheet.com 100% Free Data Sheet S...

Manual Details

Brand	ROHM
Pages	7
File Size	87.80 KB
Published	June 02, 2026

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