ROHM IMB2A datasheet

EMB2 / UMB2N / IMB2A

Datasheet

PNP -100m A -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l Outline Parameter Tr1 and Tr2 EMT6 UMT6

VCC -50V (5)

IC(MAX.) -100m A (2) (2) (3) (3)

EMB2 UMB2N

R2 47k W (SC-107C) SOT-353 (SC-88)

(4) l Features (5) (6)

1) Built-In Biasing Resistors, R1 = R2 = 47k W.

2) Two DTA144E chips in one package. (1) 3) Built-in bias resistors enable the configuration of

IMB2A an inverter circuit without connecting external SOT-457 (SC-74)

input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing l Inner circuit

of the input. They also have the advantage of

EMB2 / UMB2N IMB2A

completely eliminating parasitic effects.

OUT IN GND

OUT IN GND

5) Only the on/off conditions need to be set for (6) (5) (4)

operation, making the circuit design easy. 6) Lead Free/Ro HS Compliant.

l Application

GND IN OUT

Inverter circuit, Interface circuit, Driver circuit GND IN OUT

l Packaging specifications

Package Basic

Taping Tape width

Part No. Package size ordering Marking Reel size

code (mm) (mm)

(mm) unit (pcs)

EMB2 EMT6 T2R 8,000 B28 UMB2N UMT6 TR 3,000 B2 IMB2A SMT6 T108 3,000 B2

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