ROHM 2SAR544D datasheet user manual
Summary
This datasheet provides comprehensive technical details for the 2SAR544D PNP Silicon Epitaxial Transistor, designed for robust high-speed switching applications. The manual covers absolute maximum ratings, detailed electrical characteristics, output curves, and crucial operating parameters like saturation voltage and transition frequency. It is essential reading for electronic engineers and circuit designers developing communication equipment, automation solutions, or advanced general consumer electronics that require reliable power management and efficient transistor performance.
Page 1 Text Content
Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit : mm) 1) Low saturation voltage, typically CPT3
(SC-63)
VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50m A) <SOT-428> 2.3 0.5
2) High speed switching
Structure PNP Silicon epitaxial planar transistor
2.30.9 Applications (1) (3) 2.3(2) 0.5
Driver
Packaging specifications Inner circuit
Package CPT3 (3)
Type Code TL Basic ordering unit (pieces)
Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit (1) Base
(2) Collector
Collector-base voltage VCBO -80
(3) Emitter (2)
Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -6
DC IC -2.5 0.
Collector current
Pulsed ICP *1 -5 5. 1.
PD *2
Power dissipation
PD *3 0. 8M in
1. 2. Junction temperature Tj C 9.
Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate. *3 Tc=25℃
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©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.A
Page Summary Contents For ROHM 2SAR544D datasheet user manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 6 |
| File Size | 403.14 KB |
| Published | May 29, 2026 |
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Frequently Asked Questions
What is the maximum collector current handling capacity?
The absolute maximum rating for collector current (IC) is -5 A (Pulsed).
What must be ensured regarding the transistor's operating environment?
Users must implement safety measures like derating and redundancy, as the product failure cannot protect against physical injury or fire.
What voltage range can I use for collector-emitter breakdown testing?
The minimum Collector-Emitter breakdown voltage (BVCEO) is -80 V.
Is this transistor suitable for high-reliability systems like aerospace equipment?
No, the product is not designed for use with systems requiring an extremely high level of reliability that could pose a direct threat to human life.