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ROHM 2SAR544D datasheet user manual

Summary

This datasheet provides comprehensive technical details for the 2SAR544D PNP Silicon Epitaxial Transistor, designed for robust high-speed switching applications. The manual covers absolute maximum ratings, detailed electrical characteristics, output curves, and crucial operating parameters like saturation voltage and transition frequency. It is essential reading for electronic engineers and circuit designers developing communication equipment, automation solutions, or advanced general consumer electronics that require reliable power management and efficient transistor performance.

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Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit : mm) 1) Low saturation voltage, typically CPT3

(SC-63)

VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50m A) <SOT-428> 2.3 0.5

2) High speed switching

Structure PNP Silicon epitaxial planar transistor

2.30.9 Applications (1) (3) 2.3(2) 0.5

Driver

Packaging specifications Inner circuit

Package CPT3 (3)

Type Code TL Basic ordering unit (pieces)

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base

(2) Collector

Collector-base voltage VCBO -80

(3) Emitter (2)

Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -6

DC IC -2.5 0.

Collector current

Pulsed ICP *1 -5 5. 1.

PD *2

Power dissipation

PD *3 0. 8M in

1. 2. Junction temperature Tj C 9.

Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate. *3 Tc=25℃

www.rohm.com

©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.A

Page Summary Contents For ROHM 2SAR544D datasheet user manual

Page 1 Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit : mm) 1) Low saturation voltage, typically CPT3 (SC-63) VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50m A) &lt;SOT-428&gt; 2.3...
Page 2 2SAR544D Data Sheet Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -80 IC= -1m A Collector-base breakdown voltage BVCB...
Page 3 2SAR544D Data Sheet Electrical characteristic curves (Ta = 25C) IO :V (s t) [V IN h F Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current (Ⅰ) -4.0m A Ta=25℃ VCE=-5V -3V ...
Page 4 2SAR544D Data Sheet (A IT (p Fig.7 Emitter input capacitance vs. Emitter-Base Voltage IT IN IT ib (p Collector output capacitance vs. Collector-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Cu...
Page 5 2SAR544D Data Sheet Switching time test circuit RL=7.5Ω VCC -10V~_ Pw 50μs DUTY CYCLE≦1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com ©2010 ROHM Co., Ltd. All rights res...
Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 6
File Size 403.14 KB
Published May 29, 2026
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Frequently Asked Questions

What is the maximum collector current handling capacity?

The absolute maximum rating for collector current (IC) is -5 A (Pulsed).

What must be ensured regarding the transistor's operating environment?

Users must implement safety measures like derating and redundancy, as the product failure cannot protect against physical injury or fire.

What voltage range can I use for collector-emitter breakdown testing?

The minimum Collector-Emitter breakdown voltage (BVCEO) is -80 V.

Is this transistor suitable for high-reliability systems like aerospace equipment?

No, the product is not designed for use with systems requiring an extremely high level of reliability that could pose a direct threat to human life.