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ROHM 2SAR554R datasheet user manual

Summary

This datasheet provides comprehensive technical specifications for the 2SAR554R, a high-speed medium power PNP transistor designed for robust switching applications rated at -80V and -1.5A. The manual is essential documentation for electronic engineers and circuit designers who require detailed performance parameters, including saturation voltage curves, DC/AC current gain characteristics, dynamic timing data (turn-on/fall times), and package specifications. Utilize this resource to select the optimal component for reliable and efficient power management circuits.

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Midium Power Transistors (-80V / -1.5A) 2SAR554R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically TSMT3 VCE (sat) = -0.4V (Max.) (IC / IB= -500m A / -25m A) 2) High speed switching

Structure PNP Silicon epitaxial planar transistor

Applications

Abbreviated symbol : MH

Driver

Packaging specifications Inner circuit

(2) Package TSMT3 (3)

Type Code TL Basic ordering unit (pieces)

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base (2) Emitter

Collector-base voltage VCBO -80 (3) Collector

Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -6

DC IC -1.5

Collector current

Pulsed ICP *1 -3 PD *2 0.5

Power dissipation

PD *3 1.0

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm] ceramic substrate.

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©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.07 - Rev.A

Page Summary Contents For ROHM 2SAR554R datasheet user manual

Page 1 Midium Power Transistors (-80V / -1.5A) 2SAR554R Features Dimensions (Unit : mm) 1) Low saturation voltage, typically TSMT3 VCE (sat) = -0.4V (Max.) (IC / IB= -500m A / -25m A) 2) High speed switchin...
Page 2 2SAR554R Data Sheet Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -80 IC= -1m A Collector-base breakdown voltage BVCB...
Page 3 Data Sheet 2SAR554R Electrical characteristic curves (Ta = 25C) IO :V (s t) [V [A Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current (Ⅰ) Ta=25℃ VCE=-5V -3V COLECTOR TO ...
Page 4 Data Sheet 2SAR554R IT (p Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current IT IN IT ib (p Collector output capacitance vs.Collector-Base Voltag...
Page 5 2SAR554R Data Sheet Switching time test circuit RL=15Ω VCC -10V~_ Pw 50μs DUTY CYCLE≦1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com ©2010 ROHM Co., Ltd. All rights rese...
Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 6
File Size 328.03 KB
Published July 15, 2026
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Frequently Asked Questions

What is the maximum continuous collector current rating?

The DC Collector Current (I C) limit is -1.5 A, although a pulsed rating of -3 A is specified.

Does this transistor require special mounting conditions?

Yes; reliable power dissipation requires mounting the component on a 40 x 40 x 0.7[mm] ceramic substrate.

Is this part suitable for life-critical equipment or medical devices?

No, it is not designed for systems requiring an extremely high level of reliability where failure could pose a direct threat to human life.

How is the typical collector saturation voltage determined?

The datasheet shows that Vce(sat) is typically -0.4V when operated at I = -500mA and I = -25mA.