ROHM RUE002N05 Product Specifications User Guide

Summary

Ultra-small N-channel MOSFET in EMT3 (SOT-416) package for low-voltage switching. The ROHM RUE002N05 operates with 1.2V gate drive for battery-powered circuits. Handles 50V drain-source, 200mA continuous, 800mA pulsed in a 2.1x1.3mm footprint. Key specs: 0.3-1.0V threshold, 2.0 ohm on-resistance at 1.8V, 4ns turn-on delay. Features ESD protection and body diode. Thermal resistance 833 C/W. Targeted at designers of portable electronics needing minimal gate drive and compact size.

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1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3

(SC-75A) <SOT-416>

Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive).

Abbreviated symbol : RH

Application Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL Basic ordering unit (pieces)

RUE002N05

Absolute maximum ratings (Ta = 25C) (2) (1)

Parameter Symbol Limits Unit (1) SOURCE (2) GATE ∗1 BODY DIODE Drain-source voltage VDSS (3) DRAIN ∗2 ESD PROTECTION DIODE

Gate-source voltage VGSS 8

Continuous ID 200 m A

Drain current

Pulsed IDP 800 m A Source current Continuous IS m A

(Body Diode) *1

Pulsed ISP m A

Power dissipation PD m W Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth (ch-a) C / W * Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.06 - Rev.B

Page Summary Contents For ROHM RUE002N05 Product Specifications User Guide

Page 1 1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 (SC-75A) <SOT-416> Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage d...

Page 2 Data Sheet RUE002N05 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RUE002N05 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves 0.4 0.4 VGS= 4.5V Ta=25°C VDS= 10V VGS= 4.5V Pulsed VGS= 2.5V Pulsed VGS= 2.5V Ta=25°C VGS=1.8V 0...

Page 4 Data Sheet RUE002N05 IT IN IM ns IT fs [S VDS= 10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= 20m A Ta= -25°C Ta=25°C ID=200m A Ta=75°C Ta=125°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C DRAIN-CURRENT : ID[A] SO...

Page 5 Data Sheet RUE002N05 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	176.35 KB
Published	June 17, 2026

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Frequently Asked Questions

What is the drive voltage of the RUE002N05 MOSFET?

It supports ultra low voltage drive at 1.2V.

What is the maximum continuous drain current?

The continuous drain current is ±200 mA.

Can this MOSFET be used in medical devices?

No, it is not designed for medical or other high-reliability equipment.

What package does this MOSFET use?

It uses the small EMT3 (SC-75A/SOT-416) package.