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ROHM RAF040P01 Product Specifications and User Guide

Summary

Discover high-efficiency switching performance with this low-voltage 1.5V P-channel MOSFET. Featured in a compact surface mount package, it is engineered for rigorous switching applications requiring minimal on-resistance. This comprehensive technical manual provides design engineers with all necessary specifications, including detailed electrical characteristics, thermal ratings, and full operational curves essential for reliable circuit implementation.

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Data Sheet

1.5V Drive Pch MOSFET RAF040P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3

Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount package(TUMT3).

Abbreviated symbol : SF

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TCL Basic ordering unit (pieces)

RAF040P01

(1) Gate (2) Source 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

0. 2M ax

Parameter Symbol Limits Unit

Drain-source voltage VDSS 12 Gate-source voltage VGSS 0to8

Continuous ID 4

Drain current

Pulsed IDP *1 16

Source current Continuous IS 0.6

(Body Diode) Pulsed ISP *1 16

Power dissipation PD *2 0.8

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A

Page Summary Contents For ROHM RAF040P01 Product Specifications and User Guide

Page 1 Data Sheet 1.5V Drive Pch MOSFET RAF040P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount pa...
Page 2 Data Sheet RAF040P01 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS 12...
Page 3 Data Sheet RAF040P01 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta (o [m (o [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 T...
Page 4 Data Sheet RAF040P01 ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Dr...
Page 5 Data Sheet RAF040P01 te -S rc lt Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C Ta=25°C VDD=-6V f=1MHz ID=-4A VGS=0V Pulsed Total Gate Charge : -Qg [n...
Page 6 Data Sheet RAF040P01 Measurement circuits Pulse width ID VGS VDS 10% VGS 50% 50% RG VDD trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS Qg IG(Co...
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