ROHM RUQ050N02 Product Specifications and User Guide

Summary

This N-channel MOSFET is an efficient switching component designed for demanding electronic applications. Featuring low on-resistance, exceptional space saving in a TSMT6 surface mount package, and optimized for 1.5V driving voltages, it improves overall system efficiency. The comprehensive datasheet provides detailed performance data—including thermal ratings, dynamic switching characteristics, and precise electrical parameters—which empowers engineers designing general electronic equipment (such as audio/video or automation devices) to select the optimal solution with confidence.

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ROHM RUQ050N02 Product Specifications and User Guide - Page 1

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Page 1 Text Content

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TSMT6

Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive

Applications Switching Each lead has same dimensions

Abbreviated symbol : XG

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

RUQ050N02 ∗2

(1) Drain (2) Drain (3) Gate

(4) Source (5) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage ±10 VVGSS Continuous ±5.0 AID

Drain current

Pulsed ±10 AIDP Source current Continuous 1.0 AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 1.25 WPD Channel temperature °CTch Range of storage temperature −55 to +150 °CTstg

∗1 Pw 10μs, Duty cycle 1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Mounted on a ceramic board

www.rohm.com

1/4 2010.08 - Rev.A

Page Summary Contents For ROHM RUQ050N02 Product Specifications and User Guide

Page 1 1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive A...

Page 2 Data Sheet RUQ050N02 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=...

Page 3 Data Sheet RUQ050N02 IC IN -S IN ID IT p F -S IS on ) ( Electrical characteristics curves Ta=25°C Ta=25°C f=1MHz VDD=10V VGS=0V tf ID=5A RG=10Ω Pulsed td (off) td (on) Crss tr Ta=25°C VDD=10V VGS=4.5...

Page 4 Data Sheet RUQ050N02 IC IN -S -S IS on ) ( VGS=1.5V Ta=25°C VDS=10V Pulsed Pulsed Pulsed Ta=−25°C Ta=25°C Ta=125°C Ta=75°C Ta=75°C Ta=125°C Ta=25°C VGS=1.5V Ta=−25°C VGS=1.8V VGS=2.5V VGS=4.5V DRAIN C...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	1.05 MB
Published	June 15, 2026

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