ROHM RSH070N05 Product Specifications and User Guide

Summary

This N-channel MOSFET is designed for robust power switching applications, including DC/DC converters and inverters. Featuring a compact SOP8 surface mount package and integrated Gate-Source protection diode, it offers reliable performance in demanding electronic equipment. The accompanying technical datasheet provides comprehensive details on absolute maximum ratings, electrical characteristics, and optimal thermal management guidelines necessary for system integration by professional engineers and power electronics designers.

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Page 1 Text Content

4V Drive Nch MOSFET RSH070N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8).

Application Power switching, DC / DC converter, Inverter

Each lead has same dimensions

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB

Basic ordering unit (pieces)

RSH070N05

∗1 (1) Source

(2) Source

Absolute maximum ratings (Ta=25C) (3) Source

(4) Gate

Parameter Symbol Limits Unit (1) (2) (3) (4) (5) Drain

(6) Drain

Drain-source voltage VDSS ∗1 ESD Protection Diode. (7) Drain

∗2 Body Diode. (8) Drain

Gate-source voltage VGSS

∗ A protection diode is included between the gate

Continuous ID ±7.0

Drain current and the source terminals to protect the diode

Pulsed IDP ±28 against static electricity when the product is in

use.Use a protection circuit when the fixed

Source current Continuous IS 1.6

voltage are exceeded.

(Body diode) Pulsed ISP

Total power dissipation PD

Chanel temperature Tch

Range of Storage temperature Tstg -55 to +150 *1 PW10ｓ, Duty cycle1 *2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Chanel to ambient Rth(ch-a) * 62.5 * Mounted on a ceramic board

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM RSH070N05 Product Specifications and User Guide

Page 1 4V Drive Nch MOSFET RSH070N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). Application Power switchin...

Page 2 Data Sheet RSH070N05 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS μA VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= 1m A...

Page 3 Data Sheet RSH070N05 ra in ur re nt [A pa ci ta ce ta tic ra in -S ou rc n- ta te Electrical characteristic curves es is ta nc (o n) [m VDS=10V VGS=10V VGS=4.5V Ta=125o C pulsed pulsed Ta=125o C puls...

Page 4 Data Sheet RSH070N05 Measurement circuits Pulse Width VGS ID RL 10%VGS 90% 90% trtd(on) trtd(off) ton toff Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VGS ID IG (Const.) Qgs Qg...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	207.31 KB
Published	May 27, 2026

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Frequently Asked Questions

What is the recommended usage for this MOSFET product?

It is designed for applications like power switching, DC/DC converters, and inverters.

How should I manage heat dissipation when using this component?

The channel-to-ambient thermal resistance Rth(ch-a) limit is 62.5 °C/W when mounted on a ceramic board.

What safety warnings apply to high-reliability systems?

This product should not be used in equipment requiring extremely high reliability, such as medical instruments or aerospace machinery.

What specific protections are built into the package?

It features a built-in G-S Protection Diode and includes a Body Diode for added safety measures.