ROHM 2SAR513P Product Specifications and User Guide

Summary

This detailed technical manual provides comprehensive specifications for the 2SAR513P, a high-speed PNP Silicon epitaxial planar transistor designed for switching and driver applications. It covers crucial parameters including absolute maximum ratings, electrical characteristics (such as saturation voltage, current gain, and frequency), and detailed output curves. This resource is essential for engineers, electronics designers, and technicians who require precise performance data when integrating reliable solid-state switching components into their specialized electronic equipment.

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ROHM 2SAR513P Product Specifications and User Guide - Page 1

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Page 1 Text Content

Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500m A / -25m A)

2) High speed switching

Applications

Abbreviated symbol : MC

Driver

Packaging specifications Inner circuit (Unit : mm)

Package Taping

Type Code T100

Basic ordering unit (pieces)

2SAR513P

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base (2) Collector

Collector-base voltage VCBO -50

(3) Emitter

Collector-emitter voltage VCEO -50

Emitter-base voltage VEBO -6

DC IC -1

Collector current

Pulsed ICP *1 -2 *2 PD 0.5

Power dissipation

*3 PD

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM 2SAR513P Product Specifications and User Guide

Page 1 Midium Power Transistors (-50V / -1A) 2SAR513P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / ...

Page 2 Data Sheet 2SAR513P Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -50 IC= -1m A Collector-base breakdown voltage BVC...

Page 3 Data Sheet 2SAR513P LL CE OT UPT APA NATI C : )Fp(bo CELL OT UTAS OITA OV GATL : E tas( )[V CELL OT NE : T IC [A Electrical characteristic curves ME TI RET NI UP C T CAPA NATI C : E )Fp(bi -4.0m A T...

Page 4 Data Sheet 2SAR513P Switching time test circuit RL=20Ω VCC -10V~_ Pw 50μs DUTY CYCLE1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com 4/4 2009.12 - Rev.A ○c 2009 ROHM Co....

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	235.31 KB
Published	June 01, 2026

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Frequently Asked Questions

What is the absolute maximum collector current this device can handle?

The base collector-base voltage ($ ext{V}_{ ext{CBO}}$) and continuous collector current ($ ext{I}_{ ext{CB}}$) are set at -50 V and -1 A, respectively.

Is this transistor safe for use in life support or military equipment?

No. It is not designed for equipment requiring extremely high reliability; consult a ROHM sales representative if that purpose is intended.

How must the device be mounted for proper function?

It should be mounted on a recommended land, or preferably utilized when mounted on a ceramic board.

What is the typical saturation voltage ($ ext{V}_{ ext{CE(sat)}}$)?

The low saturation voltage is typically -0.4 V (Max.) under specified operating conditions.