ROHM 2SD2537 Product Specifications and User Guide

Summary

This comprehensive datasheet provides detailed specifications for the 2SD2537, a robust Medium Power Transistor optimized for demanding electronic applications (rated up to 25V and 1.2A). Designed for electronics engineers and circuit designers, the manual covers precise electrical characteristics, absolute maximum ratings (including temperature ranges), current gain graphs, and saturation voltage curves. Use this resource to ensure optimal component selection and reliable integration into power management or signal switching circuits.

📄 Preview ‹ PAGE OF 3 ›

‹

ROHM 2SD2537 Product Specifications and User Guide - Page 1

›

Page 1 Text Content

LL IC (m

Medium Power Transistor (25V, 1.2A) 2SD2537 Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2537 2) High emitter-base voltage. (VEBO=12V) 4.5

3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500m A/10m A)

LL IC (A

Absolute maximum ratings (Ta=25°C) 0.5 0.40.4 1.51.5

ROHM : MPT3 (1) Base

Parameter Symbol Limits Unit 3.0

EIAJ : SC-62 (2) Collector

Collector-base voltage VCBO

(3) Emitter

Collector-emitter voltage VCEO Emitter-base voltage VEBO

1.2 A (DC)

Collector current IC

A (Pulse) ∗1

Collector power dissipation PC

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board.

Packaging specifications and h FE Type 2SD2537

Package MPT3

LL IC (m

Marking DV Code T100

Basic ordering unit (pieces)

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=10μA Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=10μA

Collector cutoff current ICBO 0.3 μA VCB=30V Emitter cutoff current IEBO 0.3 μA VEB=12V

Collector-emitter saturation voltage VCE(sat) 0.3 IC/IB=500m A/10m A

VBE(sat) 1.2 IC/IB=0.5A/10m ABase-emitter saturation voltage

DC current transfer ratio VCE/IC=5V/0.5Ah FE Transition frequency f T MHz ∗VCE=10V, IE=−50m A, f=100MHz

Cob p F VCB=10V, IE=0A, f=1MHz Output capacitance

∗Measured using pulse current.

Electrical characteristics curves 2.0 2.0

Ta=25°C VCE=5V

3.0m A3.5m A Pulsed

Ta=25°C IB=00.2μA IB=0 Pulsed

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Ground emitter output characteristics( ) Fig.2 Ground emitter output characteristics ( ) Fig.3 Ground emitter propagation characteristics

www.rohm.com

Page Summary Contents For ROHM 2SD2537 Product Specifications and User Guide

Page 1 LL IC (m Medium Power Transistor (25V, 1.2A) 2SD2537 Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2537 2) High emitter-base voltage. (VEBO=12V) 4.5 3) Low saturation voltage. (Max. VC...

Page 2 2SD2537 Data Sheet IT IO f T (M z) LL TO TU TI LT (s at ) ( IN h F Ta=25°C VCE=5V Ta=25°C Pulsed Pulsed Pulsed Ta=100°C VCE=10V 25°C IC/IB=100 COLLECTOR CURRENT : IC (m A) COLLECTOR CURRENT : IC (m A)...

Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	3
File Size	128.91 KB
Published	July 07, 2026

3 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is the maximum collector power dissipation?

The maximum collector power dissipation (PC) is 0.5 W, when mounted on a 40×40×0.7mm ceramic board.

What are the absolute maximum ratings for this transistor?

The device has an absolute maximum collector-emitter voltage (VCEO) of 25 V and a collector current (IC) of 1.2 A DC.

How does derating help ensure proper use?

Users must implement safety measures like derating, redundancy, and fail-safe designs to guard against physical injury or fire risks.