ROHM RUF020N02 Product Specifications and User Guide

Summary

The RUF020N02 is a high-performance N-channel MOSFET optimized for electronic switching applications requiring minimal power loss. Its features include low on-resistance, compact surface mount integration in the TUMT3 package, and efficient 1.5V drive capability. This manual serves as a comprehensive technical resource, providing detailed data sheets, graphs, and specifications covering absolute maximum ratings (VDSS up to 20V), electrical characteristics like RDS(on) and capacitance, thermal resistance, and body diode behavior. It is ideal for engineers designing general-use electronic equipment, such as communication devices, consumer appliances, and office automation systems.

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1.5V Drive Nch MOSFET RUF020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3

Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive).

(1) Gate (2) Source Abbreviated symbol : XK (3) Drain

Applications Inner circuit Switching (3)

Packaging specifications

Package Taping (1)

Type Code TL

Basic ordering unit (pieces)

RUF020N02

(1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain 0. 2M ax

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS

Gate-source voltage ±10 VVGSS Continuous ±2 AID

Drain current

Pulsed ±6 AIDP Source current Continuous 0.6 AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 0.8 WPD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ When mounted on a ceramic board

Page Summary Contents For ROHM RUF020N02 Product Specifications and User Guide

Page 1 1.5V Drive Nch MOSFET RUF020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage driv...

Page 2 RUF020N02 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= ...

Page 3 RUF020N02 Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m AI EN : I [A ES IS TA : R S( on )[m Electrical characteristics curves Ta=25°C Ta=25°C VDS= 10V Pulsed Pulsed...

Page 4 RUF020N02 Data Sheet EV ER SE AI EN : I [A AT E- SO VO LT AG : V S [ V] VGS=0V Ta=25°C Ta=25°C Pulsed Pulsed VDD= 10V ID= 2.0A td(off) VGS=4.5V tf RG=10Ω ID= 1.0A Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-2...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	229.29 KB
Published	July 10, 2026

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Frequently Asked Questions

What are the absolute maximum ratings for the RUF020N02 MOSFET?

The Drain-source voltage (VDSS) is rated at 20V, while the gate-source voltage (VGSS) limit is ±10V.

What type of power dissipation consideration should I keep in mind?

Total power dissipation (PD) is 0.8W, and the thermal resistance Rth(ch-a) is 156 °C/W when mounted on a ceramic board.

What kind of final safety measures must I implement in my equipment?

You must implement safety measures such as derating, redundancy, fire control, and fail-safe designs.