# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Home > ROHM > ROHM RSF010P05 Product Specifications and User Guide

ROHM RSF010P05 Product Specifications and User Guide

Summary

The RSF010P05 is a Silicon P-channel MOSFET designed for efficient switching applications, featuring low on-resistance and a specialized 4V drive capability in a compact power package. This comprehensive datasheet provides vital technical specifications, including absolute maximum ratings, detailed I-V curves, and thorough electrical characteristics (switching times, thermal resistance). It is essential reading for electronics designers and engineers selecting reliable components for power management circuits.

📄 Preview ‹ PAGE OF 7 ›
‹ ROHM RSF010P05 Product Specifications and User Guide - Page 1 ›

Page 1 Text Content

4V Drive Pch MOSFET RSF010P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3

Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V)

Abbreviated symbol : SU

Application Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL

Basic ordering unit (pieces)

RSF010P05

Absolute maximum ratings (Ta = 25C) (1) (2)

(1) Gate (2) Source

∗1 BODY DIODE

Parameter Symbol Limits Unit (3) Drain

∗2 ESD PROTECTION DIODE

Drain-source voltage VDSS 45 Gate-source voltage VGSS 20

Continuous ID 1 0. 2M ax

Drain current

Pulsed IDP *1 4 Source current Continuous IS 0.6 (Body Diode) Pulsed ISP *1 4 Power dissipation PD *2 0.8

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

www.rohm.com

©2012 ROHM Co., Ltd. All rights reserved. 1/6 2012.06 - Rev.B

Page Summary Contents For ROHM RSF010P05 Product Specifications and User Guide

Page 1 4V Drive Pch MOSFET RSF010P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) Abbreviated symbo...
Page 2 Data Sheet RSF010P05 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 4...
Page 3 Data Sheet RSF010P05 Electrical characteristic curves (Ta=25C) ta tic ra in -S rc -S ta te si st ce ta tic ra in -S rc -S ta te si st ce ra in rr t : [A Fig.1 Typical Output Characteristics (Ⅰ) Fig....
Page 4 Data Sheet RSF010P05 rw rd ra sf itt ce itc in im [n s] rc rr t : Is fs [S Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta...
Page 5 Data Sheet RSF010P05 rm liz ra si rm si st ce r（ t） ci ta ce Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) Ta=25°C...
Page 6 Data Sheet RSF010P05 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VDS Qg IG(Const.) D.U.T. Qg...
Page 7 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 7
File Size 492.64 KB
Published July 10, 2026
4 views

Enter the captcha to get the download link:

captcha

Related Manuals