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ROHM RZF013P01 Product Specifications and User Guide

Summary

ROHM RZF013P01 silicon P-channel MOSFET datasheet for 1.5V drive in TUMT3 package. Features low on-resistance, high power rating, and 1.5V gate drive. Specifications include -12V Vdss, plus or minus 1.3A continuous Id, 0.8W dissipation, -55 to 150C range. Includes equivalent circuits and thermal data. Targeted at power management designers for portable devices.

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1.5V Drive Pch MOSFET RZF013P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3

Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V)

(1) Gate (2) Source Abbreviated symbol : XC (3) Drain

Applications Equivalent circuit Switching (3)

Packaging specifications

Package Taping

Type Code TL ∗1

Basic ordering unit (pieces)

RZF013P01 (2)

(1) Gate

0. 2M ax

∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±1.3 AID

Drain current

Pulsed ±5.2 AIDP

Source current Continuous −0.6 AIS

(Body diode) −5.2 AISP

Pulsed

Total power dissipation 0.8 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 156∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.02 - Rev.A 1/5

Page Summary Contents For ROHM RZF013P01 Product Specifications and User Guide

Page 1 1.5V Drive Pch MOSFET RZF013P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate (2) Source A...
Page 2 RZF013P01 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...
Page 3 RZF013P01 Data Sheet Electrical characteristic curves TA TI IN -S -S TA TE TA TI IN -S -S TA TE IS TA S( )[m IS TA )[m IN : - D[ Ta=25°C Ta=25°C VDS= -6V Pulsed VGS= -10V Pulsed VGS= -4.5V Pulsed VGS=...
Page 4 RZF013P01 Data Sheet IN : - Is [A TE -S LT -V [V Ta=25°C VGS=0V Ta=25°C Pulsed Pulsed VDD= -6V VGS= -4.5V ID= -0.6A td(off) RG=10Ω Pulsed ID= -1.3A Ta=125°C Ta=75°C Ta=25°C Ta=-25°C td(on) SOURCE-DRAI...
Page 5 RZF013P01 Data Sheet Measurement circuits Pulse Width ID VGS VDS 10% RG VDD trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms IG(Const.) D.U.T. Qgs Qgd...
Page 6 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement wit...

Manual Details

Brand ROHM
Pages 6
File Size 215.49 KB
Published June 17, 2026
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Frequently Asked Questions

What is the minimum gate voltage to drive this MOSFET?

The gate voltage needed is 1.5V for low voltage drive.

What is the max drain-source voltage?

The maximum drain-source voltage is -12 V.

What is the max continuous drain current?

The continuous drain current is ±1.3 A.

What are typical applications of this MOSFET?

It is used for switching applications.

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