ROHM RSE002P03 Product Specifications

Summary

Discover the RSE002P03 P-channel MOSFET, a high-performance transistor ideal for power switching applications. This comprehensive manual provides detailed technical data, including absolute maximum ratings, electrical characteristics (e.g., On-state resistance, capacitance), and operational guidelines. It is essential documentation for electronic engineers and circuit designers who require reliable specifications for low on-resistance switching components in demanding systems.

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RSE002P03

Transistors

4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features (3) 1) Low On-resistance.

2) Small package (EMT3).

3) 4V drive. 0.50.5 1.0

(1)Source (2)Gate

Applications (3)Drain Abbreviated symbol : WP Switching

Package specifications Inner circuit

Package Taping (3)

Type Code TL

Basic ordering unit (pieces)

RSE002P03

0. 1M in

(1) (1) Source (2) Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −30 VVDSS Gate-source voltage ±20 VVGSS

Continuous ±0.2 AID

Drain current

Pulsed ±0.4 AIDP

Total power dissipation ∗2 0.15 WPD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Each terminal mounted on a recommended land

Rev.A 1/4

Page Summary Contents For ROHM RSE002P03 Product Specifications

Page 1 RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features (3) 1) Low On-resistance. 2) Small package (EMT3). 3) 4V drive. 0.50.5 1.0 (1)Sou...

Page 2 RSE002P03 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −3...

Page 3 IC IN -S RSE002P03 IT p F IN −I -S IS on ) ( Transistors Electrical characteristics curves Ta=25°C f=1MHz Ta=25°C Ta=25°C VGS=0V VDD= −15V VDD= −15V VGS= −10V ID= −250m A RG=10Ω RG=10Ω Pulsedtf Pulsed...

Page 4 RSE002P03 IC IN -S -S IS on ) ( Transistors Ta=25°C Pulsed VGS= −4.0V −4.5V −10V DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) Rev.A 4/4

Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	5
File Size	63.31 KB
Published	May 29, 2026

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Frequently Asked Questions

What is the standard mounting environment for this MOSFET?

The thermal resistance ratings assume that each terminal is mounted on a recommended land.

How low is the maximum on-state resistance (RDS(on))?

At an ID of −0.15A and VGS = −4.5V, the RDS(on) is listed as 1.4 Ohm minimum.

What are the limits for drain-source voltage and gate-source voltage?

The limits are VDSS: −30 V to −30 V, and VGSS: ±20 V.

What precautions should be taken regarding high-reliability applications?

For equipment that directly endangers human life (like medical or aerospace machinery), consult a sales representative.