ROHM US6T6 Product Specifications Data Sheet

US6T6

Transistors

Low frequency amplifier US6T6

Application Dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) VCE(sat) − 180m V At I C = − 1A / IB = − 50m A

ROHM : TUMT6 Abbreviated symbol : T06

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit

Collector-base voltage VCBO −30 (4)(5)(6)

Collector-emitter voltage VCEO −30 0. 2M ax Emitter-base voltage VEBO −6 IC −2

Collector current

ICP −4 ∗1 m W ∗2

Power dissipation PC

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=1ms Each terminal mounted on a recommended∗2 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate.∗3

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC=−10µA Collector-emitter breakdown voltage BVCEO −12 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−15V Emitter cutoff current IEBO −100 n A VEB=−6V Collector-emitter saturation voltage VCE(sat) −120 −180 m V IC=−1A, IB=−50m A

DC current gain h FE VCE=−2V, IC=−200m A

Transition frequency f T MHz VCE=−2V, IE=200m A, f=100MHz Collector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.C 1/2