ROHM IMT17 Product Data Sheet Manual

IMT17

Transistors

General purpose transistor (isolated dual transistors) IMT17 Applications External dimensions (Unit : mm) General purpose small signal amplifier

Features

1) Two 2SA1036K chips in an SMT package.

0 to 0.1

2) Same size as SMT3 package, so same mounting

machine can be used for both. (1)(2)(3)

3) Transistor elements are independent, eliminating 0.3

interference. All terminals have same dimensions

4) High collector current. IC = −500m A

ROHM : SMT6 1.

5) Mounting cost, and area, are reduced by one half. −0 .1

EIAJ : SC-74 Abbreviated symbol: T17

Structure Packaging specifications Epitaxial planar type Packaging type Taping

PNP silicon transistor 0. to .60.15−0.06

Code T110

Part No. 3000Basic ordering unit (pieces)

The following characteristics apply to both Tr1 and Tr2.

IMT17

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO −60

Collector-emitter voltage VCEO −50 Emitter-base voltage VEBO −5

Collector current IC −500 m A Power dissipation Pd 300(TOTAL) m W

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗ 200m W per element must not be exceeded.

Electrical characteristics(Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −60 IC= −100µA

Collector-emitter breakdown voltage BVCEO −50 IC= −1m A Emitter-base breakdown voltage BVEBO −5 IE= −100µA

Collector cutoff current ICBO −0.1 µA V= −30V

Emitter cutoff current IEBO −0.1 µA V= −4V Collector-emitter saturation voltage VCE(sat) −0.6 IC/IB= −500m A/ −50m A DC current transfer ratio h FE VCE= −3V, IC= −100m A

Transition frequency f T MHz VCE= −5V, IE= 20m A, f= 100MHz

Output capacitance Cob p F VCB= −10V, IE= 0A, f= 1MHz

∗ Measured using pulse current.

Rev.A 1/2