ROHM TT8J11 Data Sheet / Manual

Summary

This MOSFET is engineered for power switching applications, featuring low on-resistance and reliable operation with a low 1.5V drive requirement in a compact package. The accompanying technical manual provides comprehensive guidelines for circuit designers, detailing all absolute maximum ratings, electrical characteristics (including switching times and capacitances), and thermal performance data across various temperatures. It is essential reading for electronics engineers selecting robust components for demanding power management systems.

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ROHM TT8J11 Data Sheet / Manual - Page 1

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Page 1 Text Content

Data Sheet

1.5V Drive Pch + Pch MOSFET TT8J11

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET TSST8

Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4)

3) Low voltage drive(1.5V drive).

Abbreviated symbol : J11

Application Switching

Inner circuit

Packaging specifications

Package Taping Type Code TCR (1) Tr1 Source ∗2 ∗2

(2) Tr1 Gate

Basic ordering unit (pieces) (3) Tr2 Source

(4) Tr2 Gate ∗1 ∗1

TT8J11

(5) Tr2 Drain (6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS 12 Gate-source voltage VGSS 0 to 8

Continuous ID 3.5

Drain current

Pulsed IDP *1 12

Source current Continuous Is 0.8

(Body Diode) Pulsed Isp *1 12 1.25 W / TOTAL PDPower dissipation *2

W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

˚C / W /TOTAL

Channel to Ambient Rth (ch-a)

˚C / W /ELEMENT

* Mounted on a ceramic board.

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Page Summary Contents For ROHM TT8J11 Data Sheet / Manual

Page 1 Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J11 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low volt...

Page 2 Data Sheet TT8J11 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0...

Page 3 Data Sheet TT8J11 ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr -I Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet TT8J11 ta ti ra in -S rc -S ta te is ta ra in rr ta ti ra in -S rc -S ta te is ta Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Drain...

Page 5 Data Sheet TT8J11 te -S rc lt Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C Ta=25°C VDD=-6V f=1MHz ID=-3.5A VGS=0V Pulsed Total Gate Charge : -Qg [n ...

Page 6 Data Sheet TT8J11 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VDS Qg IG(Const.) D.U.T. Qgs Q...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.19 MB
Published	May 27, 2026

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Frequently Asked Questions

What is the low-end drive capability?

It features a low voltage drive, specifically 1.5V drive.

What are the power dissipation limits and mounting requirements?

The allowable power dissipation (D) is 1.25 W/TOTAL. It must be mounted on a ceramic board.

How much input capacitance does it have?

The total gate capacitance (Ciss) is listed as 2600 pF at V = -6V and Ids = -3.5A.

Are there specific considerations for operation in electrical environments?

Yes, the manual notes that this product might cause chip aging and breakdown under large electrified environments, requiring an ESD protection circuit design.