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ROHM TT8U2 Product Specification Sheet

Summary

This essential technical manual details the TSST8 MOSFET/Schottky diode combo chip, designed for high-efficiency switching applications. Featuring low on-resistance, built-in body diodes, and excellent thermal performance, this component is ideal for engineers integrating robust power control into electronic appliances or communication devices. The documentation provides comprehensive absolute maximum ratings, electrical characteristics, and application guidelines to ensure correct circuit design and reliable system operation.

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1.5V Drive Pch +SBD MOSFET TT8U2 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8

Features

1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on-resistance.

3) Low voltage drive(1.5V). (1) (2) (3) (4)

4) Built in Low IR shottky barierr daiode.

Abbreviated symbol : U02

Applications Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TR

Basic ordering unit (pieces)

TT8U2 (1) ANODE

(2) ANODE (3) SOURCE (4) GATE Absolute maximum ratings (Ta = 25C) (5) DRAIN (6) DRAIN

<MOSFET> (7) CATHODE

(8) CATHODE (1) (2) (3) (4)

Parameter Symbol Limits Unit

∗1 BODY DIODE

Drain-source voltage VDSS 20 Gate-source voltage VGSS 10 Continuous ID 2.4

Drain current

Pulsed IDP 9.6 Source current Continuous IS 0.8

(Body Diode) Pulsed ISP *1 9.6

Channel temperature Tch C

Power dissipation PD 1.0 W / ELEMENT

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Parameter Symbol Limits Unit

Repetitive peak reverse voltage VRM Reverse voltage VR

Forward current IF 1.0

Forward current surge peak IFSM *1 3.0

Junction temperature Tj C

Power dissipation PD *2 1.0 W / ELEMENT

*1 60Hz / 1Cycle

*2 Mounted on a ceramic board

<MOSFET and Di>

Parameter Symbol Limits Unit

Total power dissipation PD 1.25 W / TOTAL

Range of Storage temperature Tstg 55 to 150 C * Mounted on a ceramic board

www.rohm.com

©2012 ROHM Co., Ltd. All rights reserved. 1/5 2012.02 - Rev.B

Page Summary Contents For ROHM TT8U2 Product Specification Sheet

Page 1 1.5V Drive Pch +SBD MOSFET TT8U2 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8 Features 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. ...
Page 2 Data Sheet TT8U2 Electrical characteristics (Ta=25C) &lt;MOSFET&gt; Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=10V, VDS=0V Drain-source breakdown voltage ...
Page 3 Data Sheet TT8U2 IC IN -S -S IC IN -S -S Electrical characteristic curves (Ta=25°C) IS (O IS (O IN [A &lt;MOSFET&gt; Ta=25°C Ta=25°C VDS= −10V Pulsed VGS= −4.5V Pulsed Pulsed VGS= −2.5V VGS= −4.5V Ta...
Page 4 Data Sheet TT8U2 -S -V [V IN [A VGS=0V Ta=25°C Ta=25°C Pulsed VDD= −10V Pulsed VGS= −4.5V RG=10Ω ID= −1.2A td(off) Pulsed 0.1 ID= −2.4A Ta=125°C Ta=75°C Ta=25°C 0.01 Ta=−25°C td(on) IC IN -S -S tr IT ...
Page 5 Data Sheet TT8U2 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID IG(Const.) Qgs Qgd Charg...
Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 6
File Size 475.31 KB
Published July 22, 2026
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Frequently Asked Questions

What is the maximum drain-source voltage ($V_{DSS}$) this device can handle?

The absolute maximum rating for the Drain-source voltage ($V_{DSS}$) is -20 V.

Can this component be used in critical life support systems, like medical instruments?

No. It's not designed for equipment requiring an extremely high level of reliability or those posing a direct threat to human life.

What are the key electrical features of this MOSFET package?

It features low-voltage drive (1.5V) and includes a built-in low I Schottky barrier diode.

Where must the device be mounted to ensure proper power dissipation?

The datasheet repeatedly advises that components should be mounted on a ceramic board.

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