ROHM RT1A050ZP Specification Sheet and User Guide

Summary

A high-performance P-channel MOSFET designed for efficient power switching applications. This component features exceptionally low on-resistance and accepts low voltage drive, ensuring reliable performance in various electronic devices. The comprehensive manual details absolute maximum ratings, junction temperature limits, thermal characteristics, complex electrical parameters (including switching delays and body diode specs), providing engineers with all necessary data for optimal circuit design and integration into demanding circuits.

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ROHM RT1A050ZP Specification Sheet and User Guide - Page 1

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Page 1 Text Content

1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TSST8

Features 1) Low on-resistance. 2) High power package.

3) Low voltage drive. (1.5V)

Abbreviated symbol : YH

Applications

Each lead has same dimensions

Switching

Packaging specifications Equivalent circuit

Package Taping (8) (7) (6) (5)

Type Code TR

Basic ordering unit(piecies) ∗2

RT1A050ZP

(1) Drain (2) Drain (3) Drain (4) Gate (5) Source

(6) Drain (7) Drain

*1 ESD PROTECTION DIODE

*2 BODY DIODE (8) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS

Gate-source voltage ±10 VVGSS

Continuous ±5 AID

Drain current

Pulsed ±20 AIDP

Source current Continuous −1 AIS

(Body diode) ∗1

Pulsed −20 AISP

1.25 WPD ∗2

Total power dissipation

Channel temperature °CTch

Range of Storage temerature −55 to +150 °CTstg ∗1 Pw 10µs, Duty cycle 1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C / WRth(ch-a)

∗ When mounted on a ceramic board

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Page Summary Contents For ROHM RT1A050ZP Specification Sheet and User Guide

Page 1 1.5V Drive Pch MOSFET RT1A050ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : ...

Page 2 RT1A050ZP Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V V(BR) DSS −12 ID= −1m A, VGS=0VDrain-source b...

Page 3 RT1A050ZP Data Sheet Electrical characteristic curves TA TI IN -S -S TA TE TA TI IN -S -S TA TE IS TA S( )[m IS TA S( )[m IN : - D[ Ta=25°C Ta=25°C VDS= -6V Pulsed Pulsed Pulsed Ta= 125°C VGS= -10V VG...

Page 4 RT1A050ZP Data Sheet VGS=0V Ta=25°C Ta=25°C Pulsed VDD= -6V IN : - Is [A Pulsed td(off) VGS=-4.5V tf TE -S LT -V [V RG=10Ω Ta=125°C ID= -2.5A Ta=75°C Ta=25°C ID= -5.0A Ta=-25°C td(on) SOURCE-DRAIN VOL...

Page 5 RT1A050ZP Data Sheet Measurement circuits Pulse Width ID VGS VDS 10% RG VDD trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS Qg IG(Const.) D.U.T. ...

Page 6 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement wit...

Manual Details

Brand	ROHM
Pages	6
File Size	214.73 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the low voltage driving requirement?

The MOSFET requires a low voltage drive of 1.5V.

What is the peak power dissipation limit?

The maximum total power dissipation (P_D) for this device is 1.25 W.

What are the typical body diode characteristics?

When operating in continuous mode, the body diode has a typical forward voltage (VSD) of -1.2 V at -5A.

What are the typical on-state resistance ranges?

The static drain-source on-state resistance (RDS(on)) varies depending on current and gate-source voltage, with values like 26–36 mΩ or 34–50 mΩ.