ROHM RUE002N02 Data Handbook/Specification Sheet

Summary

Ideal for switching applications, this low voltage N-channel MOSFET is designed for portable and general-use electronic equipment, including audio/video and office automation devices. The comprehensive manual provides detailed technical specifications, covering electrical ratings, thermal performance curves, and on-state resistance data. Essential details help engineers select the optimal component for reliable, high-speed switching within non-critical consumer applications.

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ROHM RUE002N02 Data Handbook/Specification Sheet - Page 1

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Page 1 Text Content

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET

Applications Switching

(1)Source

Features

(2)Gate 1) Fast switching speed. (3)Drain Abbreviated symbol : QR

2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit

Packaging specifications Package Taping

Code TL

Basic ordering unit (pieces)

RUE002N02

(1) (1) Source ∗1 ESD PROTECTION DIODE (2) Gate

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS ±8

Continuous ±200ID m A

Drain current

Pulsed IDP∗1 m A±400

Total power dissipation PD∗2 m W

Channel temperature Tch °C

Range of storage temperature Tstg °C−55 to +150

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 833∗ °C / WRth(ch-a) ∗ Each terminal mounted on a recommended land

Page Summary Contents For ROHM RUE002N02 Data Handbook/Specification Sheet

Page 1 1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate 1) Fast switching speed. (3)Drain Abbreviated symbol : ...

Page 2 RUE002N02 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±8V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=1m ...

Page 3 RUE002N02 Data Sheet ST AT IC AI -S -S TA TE Electrical characteristics curves ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m AI EN : I [A ES IS TA : R S( on )[m Ta=25°C VDS=10V VGS= 2.5V Pulsed Pulse...

Page 4 RUE002N02 Data Sheet VGS=0V VDS= 10V Ta=25°C FO AR AN SF ER Pulsed ID= 0.2A Pulsed Pulsed IT TA : | Yf s| [S IT IN IM t ( ns Ta=125°C Ta= -25°C −25°C Ta=25°C Ta=75°C Ta=125°C 0.5 ID= 0.02A SOURCE-DRAI...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	216.92 KB
Published	May 29, 2026

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Frequently Asked Questions

Why is this MOSFET suitable for portable equipment?

It has a low voltage drive of 1.2V, making it ideal for simple circuit integration in portable devices.

What is the absolute maximum drain-source voltage (VDSS)?

The VDSS limit is specified as 20 V.

Can this device be used in life-critical systems?

No. It is not designed or warranted for use in equipment where failure could result in a direct threat to human life.