ROHM RUU002N05 Data Handbook

Summary

The RUU002N05 is a high-speed, small-package Silicon N-channel MOSFET designed for efficient power switching applications requiring ultra low voltage drive capability. This datasheet provides professional engineers with comprehensive technical specifications, including absolute maximum ratings, detailed electrical characteristics, and performance curves necessary for optimal circuit design. It is ideal for use in general electronic equipment, such as audio-visual gear, communication devices, and automated systems that require reliable switching solutions.

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1.2V Drive Nch MOSFET RUU002N05

Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3

(SC-70) <SOT-323>

Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(1.2V drive).

Abbreviated symbol : RH

Application Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code T106 Basic ordering unit (pieces)

RUU002N05

Absolute maximum ratings (Ta = 25C) (2) (1)

Parameter Symbol Limits Unit (1) SOURCE (2) GATE ∗1 BODY DIODE Drain-source voltage VDSS (3) DRAIN ∗2 ESD PROTECTION DIODE

Gate-source voltage VGSS 8

Continuous ID 200 m A

Drain current

Pulsed IDP 800 m A Source current Continuous IS m A

(Body Diode) *1

Pulsed ISP m A

Power dissipation PD m W Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth (ch-a) C / W * Each terminal mounted on a recommended land.

www.rohm.com

1/5 2010.06 - Rev.B

Page Summary Contents For ROHM RUU002N05 Data Handbook

Page 1 1.2V Drive Nch MOSFET RUU002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3 (SC-70) <SOT-323> Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage dr...

Page 2 Data Sheet RUU002N05 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=...

Page 3 Data Sheet RUU002N05 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN [A Electrical characteristic curves VGS= 4.5V Ta=25°C VDS= 10V VGS= 4.5V Pulsed VGS= 2.5V Pulsed VGS= 2.5V Ta=25°C VGS=1.8V 0.3 VGS=1...

Page 4 Data Sheet RUU002N05 IT IN IM ns IT fs [S VDS= 10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= 20m A Ta= -25°C Ta=25°C ID=200m A Ta=75°C Ta=125°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C DRAIN-CURRENT : ID[A] SO...

Page 5 Data Sheet RUU002N05 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	203.58 KB
Published	June 02, 2026

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Frequently Asked Questions

Can I use this MOSFET in highly critical systems, such as medical or aerospace equipment?

No. The product is not designed for equipment where failure could result in a direct threat to human life or create a risk of human injury.

What are the device's typical on-state resistance specifications?

The static drain-source on-state resistance (Rds(on)) ranges from -1.9 to 2.7 Ohms under specified test conditions.

Does this MOSFET support low voltage control signals?

Yes, it features ultra low voltage drive capabilities and is specifically described as a 1.2V drive N-channel MOSFET.

What materials or environments are suitable for use with this device?

It is intended for general-use electronic equipment, such as audio visual, office automation, and communication devices, but not safety critical systems.