ROHM RTQ020N05 Data Handbook

Summary

This compact N-Channel MOSFET utilizes a highly space-saving TSMT6 package for reliable switching applications in general electronics. Featuring low on-resistance and optimized 2.5V drive capability, this component boosts efficiency in various consumer and industrial systems. The accompanying datasheet provides comprehensive technical details, including electrical characteristics, thermal ratings, and circuit waveforms to simplify design integration for engineers building audio visual, communication, or automation equipment.

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2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TSMT6

1.0MAX

Features

1) Low On-resistance. (6) (5) (4)

2) Space savingsmall surface mount package (TSMT6).

3) Low voltage drive (2.5V drive). 0~0.1

1pin mark

Each lead has same dimensions

Applications

Abbreviated symbol : PU

Switching

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

1. RTQ020N05 ∗2 2.

(1) Drain (2) Drain (3) Gate

(4) Source (5) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS

Gate-source voltage ±12 VVGSS Continuous ±2 AID

Drain current

Pulsed ±8 AIDP

Source current Continuous AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 1.25 WPD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ When mounted on a ceramic board

1/4 www.rohm.com 2009.10 - Rev.A

Page Summary Contents For ROHM RTQ020N05 Data Handbook

Page 1 2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX Features 1) Low On-resistance. (6) (5) (4) 2) Space savingsmall surface mount package (TSMT6). ...

Page 2 Data Sheet RTQ020N05 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= ...

Page 3 Data Sheet RTQ020N05 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m ES IS TA : R S( on )[m S( AI EN : I [A Electrical characteristics curves Ta=25°C VDS= 10V VGS= 10V Pulsed VGS= ...

Page 4 Data Sheet RTQ020N05 ST AT IC AI -S -S TA TE AP AC IT AN : C [p F] ES IS TA : R S( )[m Ta=25°C Ta=25°C td(off) VDD= 25V Pulsed VGS=4.5V RG=10Ω ID= 2.0A Pulsed ID= 1.0A Ta=25°C VDD= 25V ID= 2.0A td(on)...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	217.93 KB
Published	June 17, 2026

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Frequently Asked Questions

What is the gate threshold voltage range?

The gate threshold voltage ranges from 0.5V to 1.5V at VDS=10V, ID=1mA.

What package does this MOSFET use?

It uses the TSMT6 small surface mount package.

Can this MOSFET be used in medical devices?

No, it is not designed for medical instruments or other high reliability safety devices.

What is the max continuous drain current?

The maximum continuous drain current is ±2A at 25°C.