ROHM TT8K11 Data Handbook

Summary

A high-performance N-channel MOSFET designed for efficient power switching applications, featuring low on-resistance and optimized for 4V drive systems. This manual provides comprehensive technical data, including critical electrical characteristics, absolute maximum ratings, detailed switching parameters, thermal performance curves, and guidelines for complex measurement circuits. It is essential reading for electronics designers and engineers integrating reliable, high-efficiency components into power conversion or switching circuit designs.

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Data Sheet

4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSST8

Features

1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (1) (2) (3) (4)

Abbreviated symbol : K11

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TCR Basic ordering unit (pieces) TT8K11

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source

(4) Tr2 Gate ∗1 ∗1

(5) Tr2 Drain

(6) Tr2 Drain (1) (2) (3) (4)

(7) Tr1 Drain (8) Tr1 Drain 1 ESD PROTECTION DIODE

2 BODY DIODE

Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr1 and Tr2.>

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID 3

Drain current

Pulsed IDP *1 12

Source current Continuous Is 0.8

(Body Diode) Pulsed Isp *1 *2 1.25 W / TOTAL PDPower dissipation 1.0 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

C / W/ TOTAL

Channel to Ambient Rth (ch-a)

C / W/ ELEMENT

*Mounted on a ceramic board.

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Page Summary Contents For ROHM TT8K11 Data Handbook

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount pac...

Page 2 Data Sheet TT8K11 Electrical characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VG...

Page 3 Data Sheet TT8K11 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta (o [m [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical...

Page 4 Data Sheet TT8K11 rw rd ra fe it ta it in im rc rr Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=25°C 0.1...

Page 5 Data Sheet TT8K11 rm li ra ie rm is ta r（ t） it Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Ta=25°C Operation in this area is limited by RDS(on) f=1MHz (VGS ...

Page 6 Data Sheet TT8K11 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.14 MB
Published	July 15, 2026

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