ROHM 2SD2391 Data Handbook

Summary

This robust medium power transistor is designed for reliable high-current switching applications in electronic circuits. The comprehensive datasheet provides electrical engineers and designers with exhaustive technical documentation, including absolute maximum ratings, performance curves, and detailed metrics such as transition frequency (fT) and DC current gain (hFE). Use this guide to ensure optimal selection and successful implementation of your power management or signal amplification designs.

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Medium Power Transistor (60V, 2A) 2SD2391

Features Dimensions (Unit : mm)

1) Low saturation voltage , typically

VCE (sat) =0.13V at IC / IB =1A /50m A. 2) Collector-emitter voltage =60V 4.5

3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

1.51.5 (1)Base 3.0

(2)Collector (3)Emitter

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO

Collector current IC

Collector power dissipation PC

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board.+

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=50μA

Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=50μA

Collector cutoff current ICBO 0.1 μA VCB=50V

Emitter cutoff current IEBO 0.1 μA VEB=5V

Collector-emitter saturation voltage VCE(sat) 0.13 0.35 IC/IB=1A/50m A

h FE1 VCE/IC=−2V/−0.5A

DC current transfer ratio

h FE2 VCE/IC=−2V/−1.5A45

Transition frequency f T MHz VCE=2V, IE=−0.5A, f=100MHz Output capacitance Cob p F VCB=10V, IE=0A, f=1MHz

∗ Measured using pulse current

Packaging specifications and h FE

Type 2SD2391

Package MPT3

Marking DT∗ Code T100

Basic ordering unit (pieces) ∗Denotes h FE

www.rohm.com

1/2 2009.12 - Rev.A

Page Summary Contents For ROHM 2SD2391 Data Handbook

Page 1 Medium Power Transistor (60V, 2A) 2SD2391 Features Dimensions (Unit : mm) 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50m A. 2) Collector-emitter voltage =60V 4.5 3) Pc = ...

Page 2 Data Sheet 2SD2391 IT IO f T (M z) IN h F LL l C (A  Electrical characteristic curves 2.0 14m A VCE=2V VCE=2V Ta=100°C 1.2 Pw=10m 100m DC IB=0m A Ta=25°C COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE T...

Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	3
File Size	158.37 KB
Published	June 15, 2026

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Frequently Asked Questions

For what highly reliable systems should this transistor *not* be used?

It is not designed for equipment that requires an extremely high level of reliability, such as medical instruments or aerospace machinery.

What component does this specific model complement?

It complements the 2SB1561.

What are the absolute maximum limits for collector current ($ ext{I}_C$)?

The maximum collector current limit is $6 ext{ A}$ (single pulse, $ ext{P}_{ ext{w}} = 10 ext{ms}$).