ROHM 2SA1834 Product Specification Guide User Manual

2SA1834

Transistors

Low VCE(sat) Transistor (Strobe flash) (−20V, −10A) 2SA1834

Features External dimentions (Unit : mm)

1) Low saturation voltage, CPT3

6.5 typically VCE(sat) = −0.16V at IC / IB= −4A / −50m A. 5.1

2) High current capacity, typically IC= –10A for DC operation and –15A for 10ms pulse. 3) Complements the 2SC5001.

Packaging specifications and h FE

Type 2SA1834 2.30.9

(1)Base

Package CPT3 (2)Collector

h FE RS (3)Emitter

Code TL

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO −30 0. 8M in

Collector-emitter voltage VCEO −20 9. Emitter-base voltage VEBO −6

IC −10

Collector current

ICP −15

Base current IB −2

Collector power dissipation PC

W(Tc=25°C)

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

∗ Single pulse Pw=10ms

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC=−50µA Collector-emitter breakdown voltage BVCEO −20 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−50µA Collector cutoff current ICBO −1 µA VCB=−20V Emitter cutoff current IEBO −1 µA VEB=−5V Collector-emitter saturation voltage VCE(sat) −0.16 −0.25 IC/IB=−4A/−0.05A Base-emitter saturation voltage VBE(sat) −0.9 −1.2 IC/IB=−4A/−0.05A

h FE1 VCE=−2V , IC=−0.5A

DC current transfer ratio

h FE2 VCE=−2V , IC=−4A

Transition frequency f T MHz VCE=−5V , IE=1.5A , f=50MHz

Output capacitance Cob p F VCB=−10V , IE=0A , f=1MHz

∗ Measured using pulse current.

Rev.A 1/3