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ROHM US6T5 Technical Specifications Data Sheet

Summary

Discover the US6T5 NPN transistor, an ideal component for low-frequency amplification and driving circuits. This comprehensive technical sheet provides electrical engineers and circuit designers with everything needed for optimal integration. The manual details critical operational parameters, including collector saturation voltage, current gain (hFE), transition frequency (fT), and precise switching curves under various conditions. Use this resource to ensure accurate selection and reliable performance in your analog or digital electronic designs.

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US6T5

Transistors

Low frequency amplifier (-30V, -2A) US6T5

Application Dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) VCE(sat) : max. −370m V At lc= −1.5A / l B= −75m A ROHM : TUMT6 Abbreviated symbol : T05

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit

Collector-base voltage VCBO −30 (4)(5)(6)

Collector-emitter voltage VCEO −30 Emitter-base voltage VEBO −6 IC −2

Collector current

ICP −4 ∗1 0. 2M ax

Power dissipation PC

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=1ms Each terminal mounted on a recommended∗2 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate.∗3

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC= −10µA Collector-emitter breakdown voltage BVCEO −30 IC= −1m A BVEBO −6 IE= −10µAEmitter-base breakdown voltage

ICBO −100 n A VCB= −30VCollector cutoff curent IEBO −100 n A VEB= −6VEmitter cutoff current VCE(sat) −180 −370 m V IC= −1.5A, IB= −75m ACollector-emitter saturation voltage

h FE VCE= −2V, IC= −200m ADC current gain

Transition frequency f T MHz VCE= −2V, IE=200m A, f=100MHz Cob p FCollector output capacitance VCB= −10V, IE=0A, f=1MHz

Rev.B 1/2

Page Summary Contents For ROHM US6T5 Technical Specifications Data Sheet

Page 1 US6T5 Transistors Low frequency amplifier (-30V, -2A) US6T5 Application Dimensions (Unit : mm) Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) : max. −370m V At lc...
Page 2 LL :I LL :I US6T5 IN h F Transistors Packaging specifications package Taping Type Code TR Basic ordering unit(pieces) US6T5 Electrical characteristic curves VCE=−2V IC/IB=20/1 Ta=25 C Pulsed IT IO f T...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 62.55 KB
Published July 22, 2026
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Frequently Asked Questions

Can I use this chip in life-critical systems like medical or aerospace equipment?

No. If the application endangers human life, you must consult our sales representative before using it.

What is the maximum continuous power dissipation rating?

The rated power dissipation ($P_C$) is 400 mW (single pulse), but it can reach 1.0 W when mounted on a specific ceramic substrate.

How can I ensure proper operation during installation?

The device must be mounted on a specified 25mm×25mm×0.8mm Ceramic substrate for accurate rating adherence.