ROHM UM6J1N User Manual and Technical Specifications

Summary

This datasheet covers the ROHM UM6J1N dual P-channel MOSFET integrating two independent RSU002P03 transistors in a single UMT6 surface-mount package measuring 2.0mm×1.3mm. Each MOSFET is rated for -30V drain-source voltage, ±20V gate-source voltage, and ±0.2A continuous drain current with ±0.4A pulsed capability. On-resistance is specified at 0.9Ω typical at -10V gate drive and 1.4Ω at -4.5V, with a gate threshold voltage of -1.0V to -2.5V. Total power dissipation is 150mW for the package (120mW

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4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features 0.65 0.65 0.7 (5)

1) Two RSU002P03 transistors in a single UMT package. (6) (4)

2) The MOSFET elements are independent, eliminating

1pin mark (1) (3)

mutual interference.

3) Mounting cost and area can be cut in half. 0.2 0.15

Each lead has same dimensions

Abbreviated symbol : J01

Applications Switching

Packaging specifications Inner circuit

Package Taping

Type Code TN

Basic ordering unit (pieces)

UM6J1N

∗1 (1) Tr1 Source

(2) Tr1 Gate (3) Tr2 Drain

(1) (2) (3) 0. 1M in

(4) Tr2 Source (5) Tr2 Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Tr1 Drain

Absolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.>

Parameter Symbol Limits Unit

Drain-source voltage −30 VVDSS Gate-source voltage ±20 VVGSS

Continuous ±0.2 AID

Drain current

Pulsed ±0.4 AIDP

m W / TOTAL

∗2 Total power dissipation PD

m W / ELEMENT120 Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Thermal resistance

Parameter Symbol Limits Unit

°C/W / TOTAL

Channel to ambient Rth(ch-a)

°C/W / ELEMENT1042

∗ Each terminal mounted on a recommended land

Page Summary Contents For ROHM UM6J1N User Manual and Technical Specifications

Page 1 4V Drive Pch MOSFET UM6J1N Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 0.65 0.65 0.7 (5) 1) Two RSU002P03 transistors in a single UMT package. (6) (4) 2) The MOSFET elements are...

Page 2 UM6J1N Data Sheet IN −I IT p F Electrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10...

Page 3 UM6J1N Data Sheet IC IN -S IC IN -S -S IS on ) ( -S IS on ) ( VGS= −10V VGS= −4.5V VGS= −4V Pulsed Pulsed Pulsed Ta=125°C Ta=125°C Ta=125°C DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURREN...

Page 4 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	4
File Size	162.71 KB
Published	June 22, 2026

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