ROHM RZE002P02 Specifications and User Guide

Summary

This high-speed P-channel MOSFET offers reliable component performance for source switching and gate applications. Featuring a small EMT3 package and requiring only 1.2V drive voltage, it is ideal for various general electronics devices, including audio-visual, communication, and office automation equipment. This datasheet provides comprehensive technical specifications, including absolute maximum ratings, electrical characteristics (like on-state resistance), and thermal performance data necessary for efficient circuit design.

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ROHM RZE002P02 Specifications and User Guide - Page 1

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Page 1 Text Content

1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features 0.3 0.55 1) High speed switching.

2) Small package (EMT3).

3) 1.2V drive. (2) (1) 0.2 0.2

Applications

(1)Source

Switching

(2)Gate (3)Drain Abbreviated symbol : YK

Package specifications Inner circuit

Package Taping

Type Code TL

Basic ordering unit (pieces)

RZE002P02

(1) (1) Source

(2) Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

0. 1M in

Drain-source voltage −20 VVDSS Gate-source voltage ±10 VVGSS Continuous ±200 m AID

Drain current

Pulsed ±800 m AIDP

Souce current Continuous IS −100 m A

(Body diode) ∗1

Pulsed ISP −800 m A

Total power dissipation ∗2PD m W150

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Each terminal mounted on a recommended land

1/4 www.rohm.com 2009.06 - Rev.A

Page Summary Contents For ROHM RZE002P02 Specifications and User Guide

Page 1 1.2V Drive Pch MOSFET RZE002P02 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 0.3 0.55 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. (2) (1) 0.2 0.2 Application...

Page 2 Data Sheet RZE002P02 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20...

Page 3 Data Sheet RZE002P02 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R )[m ES IS TA : R S( )[m AI EN : - [A Electrical characteristics curves 0.2 0.2 Ta=25°C Ta=25°C VDS= -10V VGS= -10V Pul...

Page 4 Data Sheet RZE002P02 FO AR AN SF ER IT TA : | Yf s| [S SW IT IN IM : t [n s] VDS= -10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= -0.2A Ta=-25°C 0.1 Ta=125°C ID= -0.01A Ta=25°C Ta=75°C Ta=75°C Ta=25°C Ta...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	219.90 KB
Published	June 02, 2026

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Frequently Asked Questions

What is the recommended use environment for this MOSFET?

It should be used with general-use electronic equipment or devices (e.g., audio visual, office automation).

Are there specific limitations regarding field applications?

The products are not designed to be radiation tolerant and should not be used in systems requiring extremely high reliability (like medical or aerospace machinery).

How is the unit packaged?

The packaging uses a Type Code TL for Package Taping, with a basic ordering unit of 3000 pieces.

What are the maximum power dissipation and temperature rating limits?

Total power dissipation is limited to $150 \text{ mW}$, and the channel temperature ($\text{Tch}$) limit is $150^{\circ}\text{C}$.