ROHM RW1C015UN Specifications and User Guide

Summary

This low on-resistance N-channel MOSFET is engineered for efficient switching in power management applications, featuring a high-power package and optimized 1.5V gate drive. This comprehensive data sheet provides engineers with all necessary performance metrics—including electrical characteristics over varied temperatures (-25°C to 125°C) and detailed thermal ratings—to ensure reliable operation across various general electronic equipment designs such as audio, communication, and industrial devices.

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ROHM RW1C015UN Specifications and User Guide - Page 1

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Page 1 Text Content

1.5V Drive Nch MOSFET RW1C015UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

WEMT6

Features 1) Low On-resistance. 2) High power package. Low voltage drive. (1.5V) (1) (2) (3)

Abbreviated symbol : PS

Applications Switching

Packaging specifications Inner circuit

Package Taping

Type Code T2R

Basic ordering unit (pieces)

RW1C015UN

(1) Drain

Absolute maximum ratings (Ta=25°C)

(2) Drain

Parameter Symbol Limits Unit (3) Gate

(4) Source

Drain-source voltage VVDSS

∗1 ESD PROTECTION DIODE (5) Drain Gate-source voltage ±10 VVGSS ∗2 BODY DIODE (6) Drain

Continuous ±1.5 AID

Drain current

Pulsed ±3 AIDP Source current Continuous 0.5 AIS

(Body diode) ∗1

Pulsed AISP

Total power dissipation 0.7 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C / WRth (ch-a) ∗ When mounted on a ceramic board

1/4 www.rohm.com 2009.05 - Rev.A

Page Summary Contents For ROHM RW1C015UN Specifications and User Guide

Page 1 1.5V Drive Nch MOSFET RW1C015UN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET WEMT6 Features 1) Low On-resistance. 2) High power package. Low voltage drive. (1.5V) (1) (2) (3) Abbreviated ...

Page 2 Data Sheet RW1C015UN Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=...

Page 3 Data Sheet RW1C015UN ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m ES IS TA : R S( on )[m AI EN : I [A Electrical characteristics curves Ta=25°C Ta=25°C VDS= 10V VGS= 10V VGS=...

Page 4 Data Sheet RW1C015UN VGS=0V Ta=25°C Ta=25°C Pulsed Pulsed VDD= 10V VGS=4.5V AT E- SO VO LT AG : V V] EV ER SE AI EN : I [A td(off) S [ ID= 0.8A RG=10Ω Pulsed ID= 1.5A Ta=125°C 0.1 Ta=75°C td(on) Ta=25...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	225.21 KB
Published	July 07, 2026

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