ROHM RRL035P03 Specifications and User Guide

Summary

Discover the PCH MOSFET RRL035P03, engineered for high-speed switching and low on-resistance performance. This comprehensive datasheet is vital for electronic designers and engineers developing general-purpose equipment, including audio visual, communication systems, and industrial appliances. The manual provides detailed specifications covering absolute maximum ratings, extensive electrical characteristics, advanced body diode properties, and full dynamic switching behavior necessary for reliable component integration.

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ROHM RRL035P03 Specifications and User Guide - Page 1

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4V Drive Pch MOSFET RRL035P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TUMT6

Features 1) Low On-resistance. 2) High speed switching.

Abbreviated symbol :UF

Application Switching

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code TR Basic ordering unit (pieces) ∗2 RRL035P03

(1) Drain (2) Drain (3) Gate

Absolute maximum ratings (Ta = 25C)

(4) Source (1) (2) (3) Parameter Symbol Limits Unit (5) Drain

∗1 ESD PROTECTION DIODE

(6) Drain

∗2 BODY DIODE

Drain-source voltage VDSS 30 Gate-source voltage VGSS 20 Continuous ID 3.5 0. 2M ax

Drain current

Pulsed IDP *1 14 Source current Continuous IS 0.8 (Body Diode) Pulsed ISP *1 14 Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RRL035P03 Specifications and User Guide

Page 1 4V Drive Pch MOSFET RRL035P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) High speed switching. Abbreviated symbol :UF Application Switching ...

Page 2 RRL035P03 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 3...

Page 3 RRL035P03 Data Sheet IC IN -S -S IC IN -S -S Electrical characteristics curves IS (o IS (o IN -I [A VGS= -10V Ta=25°C VDS= -10V VGS= -10V VGS= -4.5V Pulsed Pulsed VGS= -3.5V VGS= -4.0V VGS= -4.5V Ta=...

Page 4 RRL035P03 Data Sheet IC IN -S -S IS (O Ta=25°C Ta=25°C Pulsed VDD= -15V tf VGS= -10V RG=10Ω ID= -1.7A td(off) Pulsed ID= -3.5A Ta=25°C VDD= -15V td(on) ID= -3.5A RG=10Ω tr Pulsed GATE-SOURCE VOLTAGE :...

Page 5 RRL035P03 Data Sheet Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID IG(Const.) Qgs Qgd C...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	369.60 KB
Published	June 22, 2026

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Frequently Asked Questions

What types of critical equipment should not use this MOSFET?

It is not designed for systems requiring extremely high reliability, such as medical instruments, aerospace machinery, or nuclear reactor controllers.

What safety measures must be implemented when using this product?

You must implement safety procedures like derating, redundancy, fire control, and fail-safe designs to guard against physical injury or damage during failure.

What is the operational temperature range for storage versus operation?

The range of storage temperature (Tstg) is -55 to +150°C, while the drain channel temperature ($T_{ch}$) limit is 150°C.