ROHM RCD080N25 Specifications and User Guide

Summary

This N-channel MOSFET switch is engineered for high-efficiency power applications, offering low on-resistance and rapid switching capability in a compact package. The comprehensive manual provides engineers with detailed technical specifications, including absolute maximum ratings, thermal curves, dynamic input characteristics, and precise switching time measurements. It is designed for professional use in building robust power conversion circuits such as DC-DC power supplies and motor controllers where reliability and high performance are critical.

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Data Sheet

10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) High-speed switching.

3) Wide range of SOA.

2.30.9 4) Drive circuits can be simple. (1) (3) 2.3(2) 0.5

5) Parallel use is easy.

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TL

Basic ordering unit (pieces)

RCD080N25

(1) Gate 0.

(2) Drain

Absolute maximum ratings (Ta = 25C) 5. 1.

(3) Source

1 BODY DIODE

Parameter Symbol Limits Unit

0. 8M in

Drain-source voltage VDSS 1.

Gate-source voltage VGSS 30 9.

Continuous ID *3 8

Drain current

Pulsed IDP *1 32 Source current Continuous IS *3

(Body Diode) Pulsed ISP *1

Avalanche current IAS *2

Avalanche energy EAS *2 4.67 m J

Power dissipation PD *4

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C * Limited only by maximum channel temperature allowed.

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Page Summary Contents For ROHM RCD080N25 Specifications and User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 3) W...

Page 2 Data Sheet RCD080N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet RCD080N25 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr [Ω ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ)...

Page 4 Data Sheet RCD080N25 ta ti ra in -S rc -S ta te is ta te -S rc lt [Ω rw rd ra fe it ta (o fs Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V V...

Page 5 Data Sheet RCD080N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.13 MB
Published	July 15, 2026

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Frequently Asked Questions

What is the absolute maximum drain-source voltage?

The absolute maximum rating for Drain-Source voltage ($ ext{V}_{ ext{DSS}}$) is 250 V.

What must be considered when calculating power dissipation?

Power dissipation (P) is limited by the channel temperature range, and a specific note warns that $ ext{P}_D$ is limited only by maximum channel temperature allowed.

Can I operate this MOSFET in parallel with others?

Yes, the datasheet notes that parallel use of the device is easy.

How does the on-state resistance change with temperature?

Static drain-source on-state resistance ($ ext{D}_{ ext{S}(on)}$) decreases as the channel temperature increases.