ROHM 2SA2071 Specifications and User Guide

Summary

This datasheet provides comprehensive specifications for a high-speed PNP Silicon epitaxial planar transistor, optimized for robust power switching and strong discharge capabilities in demanding inductive and capacitive load environments. Designed for circuit designers and electrical engineers, the manual covers absolute maximum ratings, detailed electrical parameters (including transition frequency $f_T$ and current gain $h_{FE}$), and critical performance graphs such as switching time and saturation voltage across wide temperature ranges (-40°C to 150°C).

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ROHM 2SA2071 Specifications and User Guide - Page 1

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Power transistor (60V, 3A) 2SA2071 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A)

2) Low saturation voltage, typically (Typ. : 200m V at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5824

(1)Base(Gate)

Each lead has same dimensions

Applications (2)Collector(Drain) (3)Emitter(Sourse)

Abbreviated symbol : UN

Low Frequency Amplifier High speed switching

Structure PNP Silicon epitaxial planar transistor

Packaging specifications

Package Taping Type Code T100 Basic ordering unit (pieces)

2SA2071

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit Collector-base voltage VCBO −60 Collector-emitter voltage VCEO −60 Emitter-base voltage VEBO −6 IC −3

Collector current

ICP −6

Power dissipation PC

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

∗1 Pw=100ms ∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate

www.rohm.com

1/3 2011.03 - Rev.C

Page Summary Contents For ROHM 2SA2071 Specifications and User Guide

Page 1 Power transistor (60V, 3A) 2SA2071 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200m V at IC = 2A, IB = 0...

Page 2 Data Sheet 2SA2071 LL IO IT IN IM (n s) LT sa t) Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −60 IC= −100μA Collector-e...

Page 3 Data Sheet 2SA2071 LL IC VCE= −2V Ta=25°C Ta=25°C VCE= −10V f=1MHz Ta=125°C Ta=25°C −1 Ta= −40°C BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Gr...

Page 4 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	4
File Size	933.65 KB
Published	June 06, 2026

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Frequently Asked Questions

What is the maximum continuous collector current rating (I_CP)?

The absolute maximum rated collector current ($I_{CP}$) is -6 A.

What is the transition frequency (fT) of this transistor?

The guaranteed transition frequency ($f_T$) is up to -180 MHz.

What are the thermal operating limits for the device junction temperature?

The rated junction temperature range ($T_j$) is 150°C.

How are switching times measured in the provided characteristics?

Switching time parameters (Ton, Tstg, Tf) must be measured using standard circuits like those shown in Figure 9.