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ROHM QS5U16 Specifications and User Guide

Summary

This versatile component integrates an N-channel MOSFET with a Schottky Barrier Diode in a single package, making it ideal for load switch and DC/DC conversion applications. Designed for efficient power electronics, it features low on-state resistance and fast switching at 2.5V drive. The manual provides comprehensive technical documentation covering detailed electrical characteristics, absolute maximum ratings, and performance graphs required by engineers for reliable circuit design.

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Page 1 Text Content

QS5U16

Transistors

2.5V Drive Nch+SBD MOS FET QS5U16

Structure External dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT5

Schottky Barrier DIODE

1.0MAX

Features 1) The QS5U16 combines Nch MOSFET with a 0~0.1

Schottky barrier diode in a single TSMT5 package. (1) (3)(2)

2) Low on-state resistance with fast switching. 0.4 0.16

3) Low voltage drive (2.5V).

Each lead has same dimensions

4) The Independently connected Schottky barrier diode Abbreviated symbol : U16 has low forward voltage.

Applications Load switch, DC / DC conversion

Packaging specifications Equivalent circuit

Package Taping (5) (4)

Type Code TR

Basic ordering unit (pieces)

QS5U16

(1) Gate (2) Source

(3) Anode (4) Cathode

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (5) Drain

Rev.A 1/4

Page Summary Contents For ROHM QS5U16 Specifications and User Guide

Page 1 QS5U16 Transistors 2.5V Drive Nch+SBD MOS FET QS5U16 Structure External dimensions (Unit : mm) Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX Features 1) The QS5U16 combines Nch MOSFET w...
Page 2 QS5U16 Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±2.0 AID Drain current Pulsed ±8.0 AID...
Page 3 IC IN -S QS5U16 -S IS on ) ( IN Transistors Electrical characteristic curves <MOSFET> VDS=10V VGS=4.5V VGS=4.0V Pulsed Pulsed Pulsed Ta=125°C Ta=125°C Ta=125°C Ta=75°C Ta=75°C Ta=75°C Ta=25°C Ta...
Page 4 QS5U16 -S LT Transistors Ta=25°C VDD=15V ID=2A 125°C RG=10Ω 75°C Pulsed 25°C TOTAL GATE CHARGE : Qg (n C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.10 Dynamic Input Characteristics Fig.11 ...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 84.12 KB
Published June 22, 2026
6 views

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Frequently Asked Questions

Must this component be mounted on a specific type of board?

The manual specifies that the product must be mounted on a ceramic board for operation.

What is the functional advantage of the QS5U16 package design?

It combines an N-channel MOSFET with an independently connected Schottky barrier diode in one TSMT5 package.

Can this device be used in safety-critical machinery like medical or aerospace equipment?

No, consult a sales representative if high reliability is required for life-sustaining applications.

What is the maximum total power handling capacity for both MOSFET and Diode components?

The combined total power dissipation ($P_D$) must not exceed 1.25 W at the junction temperature.

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