ROHM R5016ANX Transistors User Manual

Summary

The R5016ANX is a high-performance N-channel MOSFET designed for efficient power switching applications, featuring low on-resistance and fast transition speeds. This comprehensive manual provides engineers with all necessary specifications, including absolute maximum ratings, detailed electrical characteristics like gate threshold voltage ($\text{V}_{\text{GS}(\text{th})}$), thermal data, and comprehensive curves covering the Safe Operating Area (SOA). It is essential design documentation for integrating reliable power control components into demanding electronic circuits.

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R5016ANX

Transistors

10V Drive Nch MOSFET R5016ANX

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features 1) Low on-resistance.

2) Fast switching speed. 1.2

3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)

guaranteed to be 30V. (1)Base

2.54 0.75 2.62.54 (2)Collector (2) (3)(1)

5) Drive circuits can be simple.

(3)Emitter

6) Parallel use is easy.

Applications

Switching

Packaging specifications Inner circuit Package Bulk Code Type Basic ordering unit (pieces)

R5016ANX

Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit

Drain-source voltage VDSS

(1) Gate Gate-source voltage VGSS ±30 (2) Drain

∗1 Body Diode

(3) Source

Continuous ±16ID

Drain current

Pulsed IDP A±64

Continuous

Source current

(Body Diode) ∗1

Pulsed ISP

Avalanche Current ∗2 IAS Avalanche Energy EAS ∗2 m J

Total power dissipation (Tc=25°C) PD Channel temperature Tch °C Range of storage temperature Tstg °C−55 to +150 ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed

Thermal resistance

Parameter Symbol Limits Unit

Channel to case 2.5 °C/WRth(ch-c)

Rev.A 1/5

Page Summary Contents For ROHM R5016ANX Transistors User Manual

Page 1 R5016ANX Transistors 10V Drive Nch MOSFET R5016ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Low on-resistance. 2) Fast switching speed. 1.2 3) Wide SOA (safe oper...

Page 2 R5016ANX Transistors Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=...

Page 3 TA TI IN -S -S TA TE IN : I (A IN : I (A IS TA S( on ) ( R5016ANX Transistors Electrical characteristics curves 7.0V Ta= 25°C Operation in this PW= 100us 8.0V 6.5V Pulsed area is limited by RDS(ON) PW...

Page 4 IZ IE TH IS TA r ( t) IM : t rr (n s) IN : I (A R5016ANX Transistors VGS= 0V Cis Ta= 25°C Pulsed VDD= 250V ID= 16A RG= 10 Coss Pulsed Ta= 125°C Ta= 75°C 0.1 Ta= 25°C Ta= 25°C f= 1MHz Ta= -25°C VGS= 0V...

Page 5 R5016ANX Transistors Switching characteristics measurement circuit Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	216.39 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the typical drain-source on-state resistance?

At an ID of 8A and VGS=10V, the RDS(on) is typically 0.21 Ω.

How reliable is this component for critical applications?

It is not designed for life-critical systems (like medical or aerospace); consult a representative and use safety features when designing in high-reliability environments.

What are the power dissipation limits?

At a channel temperature of 25°C, the total power dissipation is rated at 50 PD W.

Can this device be used in parallel configurations?

Yes, the manual notes that 'Parallel use is easy' for this MOSFET.