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ROHM QST8 User Manual

Summary

The QST8 is a general-purpose power transistor designed for stable and efficient low-frequency audio amplification applications. This technical manual provides engineers with comprehensive specifications, including absolute maximum ratings, detailed electrical characteristics (like saturation voltage and current gain), and performance curves. It serves as an essential resource for designers building reliable electronic circuits that require robust power amplification capabilities within standard commercial equipment.

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Transistors

General purpose amplification (−12V, −1.5A) QST8

Application External dimensions (Unit : mm)

Low frequency amplifier

Driver

Features 1) A collector current is large. 2) Collector saturation voltage is low.

VCE (sat) : max. −200m V Each lead has same dimensions

At IC = −500m A / IB = −25m A

ROHM : TSMT6 Abbreviated symbol : T08

Absolute maximum ratings (Ta=25°C) Equivalent circuit 0.

Parameter Symbol Limits Unit

Collector-base voltage VCBO −15 (5)(6) (4)

Collector-emitter voltage VCEO −12 Emitter-base voltage VEBO −6 (5

IC −1.5 0. 2.

Collector current Tr1 Tr2

ICP −3

m W/TOTAL

Power dissipation PC 1.25 W/TOTAL

0.9 W/ELEMENT

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

∗1 Single pulse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× 0.8mm ceramic substratet

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −15 IC= −10µA

Collector-emitter breakdown voltage BVCEO −12 IC= −1m A Emitter-base breakdown voltage BVEBO −6 IE= −10µA

Collector cutoff current ICBO −100 n A VCB= −15V

Emitter cutoff current IEBO −100 n A VEB= −6V Collector-emitter saturation voltage VCE(sat) −85 −200 m V IC= −500m A, IB= −25m A DC current gain h FE VCE= −2V, IC= −200m A Transition frequency f T MHz VCE= −2V, IE=200m A, f=100MHz

Corrector output capacitance Cob p F VCB= −10V, IE=0A, f=1MHz

∗Pulsed

Rev.A 1/2

Page Summary Contents For ROHM QST8 User Manual

Page 1 Transistors General purpose amplification (−12V, −1.5A) QST8 Application External dimensions (Unit : mm) Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturatio...
Page 2 IT TE IN IT ib (p F) LL IC QST8 IN h F LL TO TP IT ob (p F) Transistors Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) Electrical characteristic curves VCE= −2V IC /...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 63.86 KB
Published May 29, 2026
44 views

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Frequently Asked Questions

What are the recommended mounting specifications for this transistor?

It must be mounted on a 25mm×25mm×0.8mm ceramic substrate.

What are the maximum absolute ratings for voltage?

The limit voltages include VCBO of −15 V, VCEO of −12 V, and VEBO of −6 V.

When should I exercise caution regarding device usage?

Use caution if the malfunction could directly endanger human life (e.g., medical instruments or aerospace machinery).

What voltage is the saturation state for the collector-emitter junction?

The maximum specified value for the Collector-emitter saturation voltage VCE(sat) is 200 mV.