ROHM 2SB1710 User Guide Manual

2SB1710

Transistors

General purpose amplification (−30V, −1A) 2SB1710

Application External dimensions (Unit : mm)

Low frequency amplifier

TSMT3

Driver

1.0MAX

Features (3)

1) A collector current is large.

2) Collector saturation voltage is low. (2)(1) 0.950.95

VCE(sat) ≤ −350m V 0.16

(1) Base

at Ic = −500m A / IB = −25m A

(2) Emitter

(3) Collector Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Packaging specifications

Parameter Symbol Limits Unit Package Taping

Collector-base voltage VCBO −30 2.

Type Code TL

Collector-emitter voltage VCEO −30

VEBO −6 Basic ordering unit (pieces)

Emitter-base voltage

IC −1

Collector current 2SB1710

ICP −2

PC m W ∗2

Power dissipation Junction temperature Tj °C Range of storage temperature Tstg −55~+150 °C ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC=−10µA

Collector-emitter breakdown voltage BVCEO −30 IC=−1m A Emitter-base breakdown voltage BVEBO −6 IE=−10µA

Collector cutoff current ICBO −100 n A VCB=−30V Emitter cutoff current IEBO −100 n A VEB=−6V

Collector-emitter saturation voltage VCE(sat) −150 −350 m V IC=−500m A, IB=−25m A DC current gain h FE VCE=−2V, IC=−100m A

Transition frequency f T MHz VCE=−2V, IE=100m A, f=100MHz Corrector output capacitance Cob p F VCB=−10V, IE=0A, f=1MHz

∗ Pulsed

Rev.A 1/2